Inventor
SU YU-CHUNG
TW23 patents
⚠️ This page may combine multiple inventors who share the name “SU YU-CHUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS9812358B1Nov 7, 2017
FinFET structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations83
US9436086B2Sep 6, 2016
Anti-reflective layer and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US9281192B2Mar 8, 2016
CMP-friendly coatings for planar recessing or removing of variable-height layers
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11120995B2Sep 14, 2021
Method for forming multi-layer mask
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10755927B2Aug 25, 2020
Anti-reflective gap filling materials and methods
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10082734B2Sep 25, 2018
Composition and method for lithography patterning
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11094541B2Aug 17, 2021
Anti-reflective coating materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10768527B2Sep 8, 2020
Resist solvents for photolithography applications
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12547075B2Feb 10, 2026
Method of forming photoresist pattern
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10770293B2Sep 8, 2020
Method for manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10497574B2Dec 3, 2019
Method for forming multi-layer mask
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10163631B2Dec 25, 2018
Polymer resin comprising gap filling materials and methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9761449B2Sep 12, 2017
Gap filling materials and methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12578640B2Mar 17, 2026
Photosensitive material for photoresist and lithography
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12087616B2Sep 10, 2024
Air gap formation method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10515953B2Dec 24, 2019
Method and structure for gap filling improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9793268B2Oct 17, 2017
Method and structure for gap filling improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US12535739B2Jan 27, 2026
Method of forming photoresist pattern
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
TAIWAN SEMICONDUCTOR MFG
3 patentsUS9245751B2Jan 26, 2016
Anti-reflective layer and method
TAIWAN SEMICONDUCTOR MFG6 citations83
US9362120B2Jun 7, 2016
Lithography process and composition with de-crosslinkable crosslink material
TAIWAN SEMICONDUCTOR MFG4 citations72
US9349622B2May 24, 2016
Method and apparatus for planarization of substrate coatings
TAIWAN SEMICONDUCTOR MFG1 citations51