Inventor
AMO ATSUSHI
JP21 patents
⚠️ This page may combine multiple inventors who share the name “AMO ATSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
11 patentsUS12040399B2Jul 16, 2024
Semiconductor device
RENESAS ELECTRONICS CORP1 citations62
US10205006B2Feb 12, 2019
Method for manufacturing semiconductor device including patterning conductor film disposed on insulating film
RENESAS ELECTRONICS CORP1 citations62
US9755086B2Sep 5, 2017
Semiconductor device and a manufacturing method thereof
RENESAS ELECTRONICS CORP1 citations62
US7884480B2Feb 8, 2011
Semiconductor device and method of manufacturing same
RENESAS ELECTRONICS CORP1 citations62
US11563111B2Jan 24, 2023
Method of manufacturing semiconductor device having split-gate memory and MISFET
RENESAS ELECTRONICS CORP0 citations51
US10243085B2Mar 26, 2019
Semiconductor device and method of manufacturing same
RENESAS ELECTRONICS CORP0 citations51
US10211348B2Feb 19, 2019
Semiconductor device and a manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations51
US9954120B2Apr 24, 2018
Semiconductor device and a manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations51
US9947776B2Apr 17, 2018
Method for manufacturing semiconductor device including memory cell of nonvolatile memory, capacitance element, and transistors
RENESAS ELECTRONICS CORP1 citations51
US9748407B2Aug 29, 2017
Semiconductor device and method of manufacturing same
RENESAS ELECTRONICS CORP0 citations51
US10847628B2Nov 24, 2020
Semiconductor device and manufacturing method of semiconductor device
RENESAS ELECTRONICS CORP0 citations41
RENESAS TECH CORP
6 patentsUS7508022B2Mar 24, 2009
Semiconductor device including a TCAM having a storage element formed with a DRAM
RENESAS TECH CORP11 citations83
US7498627B2Mar 3, 2009
Semiconductor device including a TCAM having a storage element formed with a DRAM
RENESAS TECH CORP7 citations73
US7005694B2Feb 28, 2006
Semiconductor device including a TCAM having a storage element formed with a DRAM
RENESAS TECH CORP7 citations73
US6798006B2Sep 28, 2004
Semiconductor device and manufacturing method thereof
RENESAS TECH CORP9 citations73
US7563668B2Jul 21, 2009
Semiconductor device and method of manufacturing same
RENESAS TECH CORP2 citations62
US7235836B2Jun 26, 2007
Semiconductor device including a TCAM having a storage element formed with a DRAM
RENESAS TECH CORP2 citations62
MITSUBISHI ELECTRIC CORP
3 patentsUS6690053B2Feb 10, 2004
Shared contact in a semiconductor device in which DRAMs and SRAMs are combined and method of manufacturing the same
MITSUBISHI ELECTRIC CORP30 citations92
US6025620AFeb 15, 2000
Semiconductor device and method of producing the same
MITSUBISHI ELECTRIC CORP47 citations92
US7145240B2Dec 5, 2006
Semiconductor device having a capacitor and method of manufacturing the same
MITSUBISHI ELECTRIC CORP3 citations62