Inventor
SHIN YOO CHEOL
KR33 patents
⚠️ This page may combine multiple inventors who share the name “SHIN YOO CHEOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
24 patentsUS10381370B2Aug 13, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD50 citations98
US7480178B2Jan 20, 2009
NAND flash memory device having dummy memory cells and methods of operating same
SAMSUNG ELECTRONICS CO LTD59 citations98
US6326270B1Dec 4, 2001
Methods of forming integrated circuit memory devices using masking layers to inhibit overetching of impurity regions and conductive lines
SAMSUNG ELECTRONICS CO LTD101 citations98
US6642105B2Nov 4, 2003
Semiconductor device having multi-gate insulating layers and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD63 citations96
US7881114B2Feb 1, 2011
NAND flash memory device having dummy memory cells and methods of operating same
SAMSUNG ELECTRONICS CO LTD25 citations92
US6867453B2Mar 15, 2005
Memory device and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD28 citations92
US6028001AFeb 22, 2000
Methods of fabricating contact holes for integrated circuit substrates by etching to define a sidewall and concurrently forming a polymer on the sidewall
SAMSUNG ELECTRONICS CO LTD35 citations92
US9905570B2Feb 27, 2018
Semiconductor device with vertical memory
SAMSUNG ELECTRONICS CO LTD5 citations84
US8030738B2Oct 4, 2011
Semiconductor device with resistor pattern and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7776687B2Aug 17, 2010
Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7778082B2Aug 17, 2010
Non-volatile memory device and programming method
SAMSUNG ELECTRONICS CO LTD13 citations84
US7399672B2Jul 15, 2008
Methods of forming nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD19 citations84
US7605430B2Oct 20, 2009
Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations74
US7223659B2May 29, 2007
Memory device and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD6 citations74
US7109566B2Sep 19, 2006
Semiconductor device with resistor pattern and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations74
US10644019B2May 5, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations73
US10685708B2Jun 16, 2020
Semiconductor device including volatile and non-volatile memory cells
SAMSUNG ELECTRONICS CO LTD4 citations71
US12532467B2Jan 20, 2026
Nonvolatile memory with vertical contact through memory stack
SAMSUNG ELECTRONICS CO LTD0 citations63
US11991879B2May 21, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations63
US10903226B2Jan 26, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations63
US7863686B2Jan 4, 2011
Nonvolatile memory devices having a fin shaped active region
SAMSUNG ELECTRONICS CO LTD2 citations63
US7538385B2May 26, 2009
Memory device and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD3 citations63
US7977730B2Jul 12, 2011
Memory device and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US7772654B2Aug 10, 2010
Methods of fabricating nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD1 citations52