P

Inventor

SHIN YOO CHEOL

KR33 patents
⚠️ This page may combine multiple inventors who share the name “SHIN YOO CHEOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

24 patents
US10381370B2Aug 13, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD50 citations98
US7480178B2Jan 20, 2009

NAND flash memory device having dummy memory cells and methods of operating same

SAMSUNG ELECTRONICS CO LTD59 citations98
US6326270B1Dec 4, 2001

Methods of forming integrated circuit memory devices using masking layers to inhibit overetching of impurity regions and conductive lines

SAMSUNG ELECTRONICS CO LTD101 citations98
US6642105B2Nov 4, 2003

Semiconductor device having multi-gate insulating layers and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD63 citations96
US7881114B2Feb 1, 2011

NAND flash memory device having dummy memory cells and methods of operating same

SAMSUNG ELECTRONICS CO LTD25 citations92
US6867453B2Mar 15, 2005

Memory device and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD28 citations92
US6028001AFeb 22, 2000

Methods of fabricating contact holes for integrated circuit substrates by etching to define a sidewall and concurrently forming a polymer on the sidewall

SAMSUNG ELECTRONICS CO LTD35 citations92
US9905570B2Feb 27, 2018

Semiconductor device with vertical memory

SAMSUNG ELECTRONICS CO LTD5 citations84
US8030738B2Oct 4, 2011

Semiconductor device with resistor pattern and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7776687B2Aug 17, 2010

Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7778082B2Aug 17, 2010

Non-volatile memory device and programming method

SAMSUNG ELECTRONICS CO LTD13 citations84
US7399672B2Jul 15, 2008

Methods of forming nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD19 citations84
US7605430B2Oct 20, 2009

Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations74
US7223659B2May 29, 2007

Memory device and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD6 citations74
US7109566B2Sep 19, 2006

Semiconductor device with resistor pattern and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations74
US10644019B2May 5, 2020

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations73
US10685708B2Jun 16, 2020

Semiconductor device including volatile and non-volatile memory cells

SAMSUNG ELECTRONICS CO LTD4 citations71
US12532467B2Jan 20, 2026

Nonvolatile memory with vertical contact through memory stack

SAMSUNG ELECTRONICS CO LTD0 citations63
US11991879B2May 21, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations63
US10903226B2Jan 26, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations63
US7863686B2Jan 4, 2011

Nonvolatile memory devices having a fin shaped active region

SAMSUNG ELECTRONICS CO LTD2 citations63
US7538385B2May 26, 2009

Memory device and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD3 citations63
US7977730B2Jul 12, 2011

Memory device and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD0 citations52
US7772654B2Aug 10, 2010

Methods of fabricating nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD1 citations52

SHIN YOO-CHEOL

2 patents

HAN SANG KEE

2 patents

PARK KI-TAE

1 patent

YUN SUNG-WON

1 patent

SHIN YOO CHEOL

1 patent

KIM JAEHONG

1 patent

KANG CHANG-SEOK

1 patent