Inventor

PING ER-XUAN

US196 patents

⚠️ This page may combine multiple inventors who share the name “PING ER-XUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PING ER-XUAN

MICRON TECHNOLOGY INC

Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces

Method and structure for reducing leakage current in capacitors

Method of forming a container capacitor structure

Atomic layer deposition of capacitor dielectric

Semiconductor structure having a doped conductive layer

Semiconductor structure having a doped conductive layer

Method for forming raised structures by controlled selective epitaxial growth of facet using spacer

Methods of forming semiconductor circuitry

Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer

FET having epitaxial silicon growth

Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth

Applying epitaxial silicon in disposable spacer flow

Semiconductor processing method of providing a doped polysilicon layer

Method of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitor

Method of making integrated capacitor incorporating high K dielectric

Formation of conductive rugged silicon

Method for forming controllable surface enhanced three dimensional objects

Semiconductor processing method of providing a doped polysilicon layer

Process for forming capacitor array structure for semiconductor devices

Method for forming controllable surface enhanced three dimensional objects

Semiconductor processing method of making a hemispherical grain (HSG) polysilicon layer

Applying epitaxial silicon in disposable spacer flow

Method of atomic layer deposition on plural semiconductor substrates simultaneously

Diffusion-enhanced crystallization of amorphous materials to improve surface roughness

Methods for treating pluralities of discrete semiconductor substrates

Structure to reduce line-line capacitance with low K material

Reduction of damage in semiconductor container capacitors

Method, structure and process flow to reduce line-line capacitance with low-K material

Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions

Method of fabricating a field effect transistor

Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer

Methods of forming a contact to a substrate

Integrated capacitor incorporating high K dielectric

Selective silicon formation for semiconductor devices

Method to fabricate an intrinsic polycrystalline silicon film

Capacitor array structure for semiconductor devices

Methods of forming hemispherical grain polysilicon

Diffusion-enhanced crystallization of amorphous materials to improve surface roughness

Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers

Capacitor constructions and methods of forming

Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces

Dual-sided capacitor

Methods of forming capacitor electrodes

Microelectronic contacts

SANDISK 3D LLC

Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

Method of making a nonvolatile memory device including forming a pillar shaped semiconductor device and a shadow mask

XU HUIWEN

Carbon-based interface layer for a memory device and methods of forming the same

Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same

MATAMIS GEORGE

Self-aligned three-dimensional non-volatile memory fabrication

APPLIED MATERIALS INC

Multi-layer stacks for 3D NAND extendibility