Inventor

KUO CHIEN-I

TW46 patents

⚠️ This page may combine multiple inventors who share the name “KUO CHIEN-I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUO CHIEN-I

TAIWAN SEMICONDUCTOR MFG CO LTD

FETS and methods of forming FETs

Semiconductor device with epitaxial source/drain

Semiconductor device convex source/drain region

Source and drain formation technique for fin-like field effect transistor

Semiconductor device and manufacturing method thereof

FETS and methods of forming FETS

Forming epitaxial structures in fin field effect transistors

FETS and methods of forming FETS

FinFET device and method for fabricating the same

Transistor source/drain regions and methods of forming the same

Semiconductor device and manufacturing method thereof

Semiconductor device

FETS and methods of forming FETS

FETs and methods of forming FETs

FinFET having a non-faceted top surface portion for a source/drain region

FinFET device and method for fabricating the same

Source/drain device and method of forming thereof

Forming epitaxial structures in fin field effect transistors

Semiconductor device and manufacturing method thereof

Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer

Integrated circuit structure

FETS and methods of forming FETS

Source/drain device and method of forming thereof

Integrated circuit structure and manufacturing method thereof

Forming epitaxial structures in fin field effect transistors

Method for fabricating semiconductor device

Semiconductor device convex source/drain region

Semiconductor device with epitaxial source/drain

Semiconductor device convex source/drain region

Semiconductor device and manufacturing method thereof

FinFET device and method for fabricating the same

Source/drain regions of semiconductor devices and methods of forming the same

Source/drain regions of semiconductor devices and methods of forming the same

Source/drain regions of semiconductor devices and methods of forming the same

Backside source/drain contacts and methods of forming the same

Semiconductor device and method of manufacture

FETs and methods of forming FETs

Semiconductor device and method for fabricating the same

FETS and methods of forming FETS

Epitaxial features in semiconductor devices and manufacturing method of the same

Semiconductor device source/drain region with arsenic-containing barrier region

Semiconductor device source/drain region with arsenic-containing barrier region

Nanosheet semiconductor device and method for manufacturing the same

Semiconductor device having NFET structure and method of fabricating the same

CHANG EDWARD YI

High electron mobility transistor and method for fabricating the same

UNIV NAT CHIAO TUNG

Gate structure