P

Inventor

TING HENG-WEN

TW32 patents
⚠️ This page may combine multiple inventors who share the name “TING HENG-WEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

30 patents
US9831116B2Nov 28, 2017

FETS and methods of forming FETs

TAIWAN SEMICONDUCTOR MFG CO LTD23 citations93
US9905641B2Feb 27, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11004724B2May 11, 2021

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10483396B1Nov 19, 2019

Interfacial layer between fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US10103249B2Oct 16, 2018

FinFET device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11164944B2Nov 2, 2021

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11075120B2Jul 27, 2021

FinFET device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10468482B2Nov 5, 2019

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11948999B2Apr 2, 2024

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11728208B2Aug 15, 2023

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12471311B2Nov 11, 2025

Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218240B2Feb 4, 2025

Source/drain regions of FinFET devices and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12112986B2Oct 8, 2024

FinFET device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12002854B2Jun 4, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735664B2Aug 22, 2023

Source/drain regions of FINFET devices and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11430878B2Aug 30, 2022

Method for fabricating semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11171209B2Nov 9, 2021

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11107923B2Aug 31, 2021

Source/drain regions of FinFET devices and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991795B2Apr 27, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336210B2Jun 17, 2025

Source/drain structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11735668B2Aug 22, 2023

Interfacial layer between fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11575026B2Feb 7, 2023

Source/drain structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11482620B2Oct 25, 2022

Interfacial layer between Fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10944005B2Mar 9, 2021

Interfacial layer between fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12057450B2Aug 6, 2024

Epitaxy regions with large landing areas for contact plugs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11652105B2May 16, 2023

Epitaxy regions with large landing areas for contact plugs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12094761B2Sep 17, 2024

FETs and methods of forming FETs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10749013B2Aug 18, 2020

Semiconductor device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10269618B2Apr 23, 2019

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10164097B2Dec 25, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51

CHEN SZU-YING

1 patent

NAT UNIV TSING HUA

1 patent