P

Inventor

TAI JUNG-CHI

TW25 patents
⚠️ This page may combine multiple inventors who share the name “TAI JUNG-CHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

18 patents
US9831116B2Nov 28, 2017

FETS and methods of forming FETs

TAIWAN SEMICONDUCTOR MFG CO LTD23 citations93
US9905641B2Feb 27, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11004724B2May 11, 2021

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10103249B2Oct 16, 2018

FinFET device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10468482B2Nov 5, 2019

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11948999B2Apr 2, 2024

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11728208B2Aug 15, 2023

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12471311B2Nov 11, 2025

Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855142B2Dec 26, 2023

Supportive layer in source/drains of FinFET devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11476331B2Oct 18, 2022

Supportive layer in source/drains of FinFET devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11430878B2Aug 30, 2022

Method for fabricating semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991795B2Apr 27, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12057450B2Aug 6, 2024

Epitaxy regions with large landing areas for contact plugs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11652105B2May 16, 2023

Epitaxy regions with large landing areas for contact plugs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12094761B2Sep 17, 2024

FETs and methods of forming FETs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10854715B2Dec 1, 2020

Supportive layer in source/drains of FinFET devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10749013B2Aug 18, 2020

Semiconductor device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10269618B2Apr 23, 2019

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

KANG NA HSIUNG ENTPR CO LTD

5 patents

TAI JUNG-CHI

2 patents