Inventor
JOHNSON ADAM D
US17 patents
⚠️ This page may combine multiple inventors who share the name “JOHNSON ADAM D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
16 patentsUS9281044B2Mar 8, 2016
Apparatuses having a ferroelectric field-effect transistor memory array and related method
MICRON TECHNOLOGY INC71 citations97
US9530794B2Dec 27, 2016
Apparatuses having a ferroelectric field-effect transistor memory array and related method
MICRON TECHNOLOGY INC19 citations92
US10510773B2Dec 17, 2019
Apparatuses having a ferroelectric field-effect transistor memory array and related method
MICRON TECHNOLOGY INC10 citations84
US9786684B2Oct 10, 2017
Apparatuses having a ferroelectric field-effect transistor memory array and related method
MICRON TECHNOLOGY INC9 citations84
US8929125B2Jan 6, 2015
Apparatus and methods for forming a memory cell using charge monitoring
MICRON TECHNOLOGY INC8 citations84
US9558803B2Jan 31, 2017
Fixed voltage sensing in a memory device
MICRON TECHNOLOGY INC6 citations83
US8687435B2Apr 1, 2014
System and method for reducing pin-count of memory devices, and memory device testers for same
MICRON TECHNOLOGY INC9 citations83
US10510423B2Dec 17, 2019
Mitigating disturbances of memory cells
MICRON TECHNOLOGY INC4 citations73
US10062432B2Aug 28, 2018
Resistive memory sensing
MICRON TECHNOLOGY INC2 citations73
US10770125B2Sep 8, 2020
Fixed voltage sensing in a memory device
MICRON TECHNOLOGY INC4 citations72
US9779806B2Oct 3, 2017
Resistive memory sensing methods and devices
MICRON TECHNOLOGY INC2 citations72
US11562782B2Jan 24, 2023
Fixed voltage sensing in a memory device
MICRON TECHNOLOGY INC0 citations62
US11244733B2Feb 8, 2022
Mitigating disturbances of memory cells
MICRON TECHNOLOGY INC0 citations62
US10699784B2Jun 30, 2020
Resistive memory sensing
MICRON TECHNOLOGY INC0 citations52
US9230645B2Jan 5, 2016
Apparatus and methods for forming a memory cell using charge monitoring
MICRON TECHNOLOGY INC0 citations52
US9058875B2Jun 16, 2015
Resistive memory sensing
MICRON TECHNOLOGY INC0 citations52