Inventor
WERTHMANN HUBERT
DE14 patents
⚠️ This page may combine multiple inventors who share the name “WERTHMANN HUBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
10 patentsUS6949812B2Sep 27, 2005
Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure
INFINEON TECHNOLOGIES AG7 citations73
US6873242B2Mar 29, 2005
Magnetic component
INFINEON TECHNOLOGIES AG7 citations72
US9577852B2Feb 21, 2017
Common-mode suppressor based on differential transmission line
INFINEON TECHNOLOGIES AG3 citations69
US6551911B1Apr 22, 2003
Method for producing Schottky diodes and Schottky diodes
INFINEON TECHNOLOGIES AG2 citations62
US6448162B1Sep 10, 2002
Method for producing schottky diodes
INFINEON TECHNOLOGIES AG5 citations62
US9548293B2Jan 17, 2017
III-nitride based ESD protection device
INFINEON TECHNOLOGIES AG0 citations51
US6842083B2Jan 11, 2005
Component having an integrated radiofrequency circuit
INFINEON TECHNOLOGIES AG1 citations50
US9165828B2Oct 20, 2015
Semiconductor device comprising a fuse structure and a method for manufacturing such semiconductor device
INFINEON TECHNOLOGIES AG0 citations49
US7307329B2Dec 11, 2007
Electronic device with guard ring
INFINEON TECHNOLOGIES AG1 citations47
US12125841B2Oct 22, 2024
Protection device with p-n junction devices monolithically integrated in a semiconductor body
INFINEON TECHNOLOGIES AG0 citations45
SIEMENS AG
3 patentsUS6191015B1Feb 20, 2001
Method for producing a Schottky diode assembly formed on a semiconductor substrate
SIEMENS AG28 citations92
US5907179AMay 25, 1999
Schottky diode assembly and production method
SIEMENS AG21 citations92
US6060757AMay 9, 2000
High frequency RF diode with low parasitic capacitance
SIEMENS AG4 citations62