Inventor
HASEGAWA HISASHI
47 patents
⚠️ This page may combine multiple inventors who share the name “HASEGAWA HISASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEIKO INSTR INC
18 patentsUS6768174B2Jul 27, 2004
Complementary MOS transistors having p-type gate electrodes
SEIKO INSTR INC24 citations93
US6777752B2Aug 17, 2004
Complementary MOS semiconductor device
SEIKO INSTR INC18 citations84
US6949777B2Sep 27, 2005
Method of controlling insulated gate transistor
SEIKO INSTR INC6 citations74
US6613625B1Sep 2, 2003
Method of manufacturing a semiconductor device
SEIKO INSTR INC8 citations74
US7545018B2Jun 9, 2009
High voltage operating field effect transistor, bias circuit therefor and high voltage circuit thereof
SEIKO INSTR INC2 citations63
US7528032B2May 5, 2009
Method for manufacturing semiconductor device
SEIKO INSTR INC4 citations63
US7375001B2May 20, 2008
Semiconductor device and method therefore
SEIKO INSTR INC3 citations63
US7190032B2Mar 13, 2007
Insulated gate transistor
SEIKO INSTR INC5 citations63
US7851858B2Dec 14, 2010
MOSFET having SOI and method
SEIKO INSTR INC3 citations62
US8012835B2Sep 6, 2011
Method of high voltage operation of field effect transistor
SEIKO INSTR INC0 citations52
US7816212B2Oct 19, 2010
Method of high voltage operation of a field effect transistor
SEIKO INSTR INC0 citations52
US7566934B2Jul 28, 2009
Semiconductor device to suppress leak current at an end of an isolation film
SEIKO INSTR INC1 citations52
US7432568B2Oct 7, 2008
High voltage operating field effect transistor, and bias circuit therefor and high voltage circuit thereof
SEIKO INSTR INC0 citations52
US7002235B2Feb 21, 2006
Semiconductor device
SEIKO INSTR INC0 citations52
US9570537B2Feb 14, 2017
Semiconductor device
SEIKO INSTR INC0 citations42
US7282763B2Oct 16, 2007
Field effect transistor formed on an insulating substrate and integrated circuit thereof
SEIKO INSTR INC0 citations42
US7750411B2Jul 6, 2010
Semiconductor integrated circuit device
SEIKO INSTR INC0 citations41
US7790555B2Sep 7, 2010
Semiconductor device manufacturing method with spin-coating of photoresist material
SEIKO INSTR INC0 citations40
SHIRAISHI KOGYO KAISHA LTD
5 patentsUS4244933AJan 13, 1981
Calcium carbonate particles and processes for preparing same
SHIRAISHI KOGYO KAISHA LTD54 citations92
US4133894AJan 9, 1979
Process for preparing precipitated calcium carbonate
SHIRAISHI KOGYO KAISHA LTD42 citations92
US4124688ANov 7, 1978
Process for preparing cubic crystals of calcium carbonate
SHIRAISHI KOGYO KAISHA LTD31 citations92
US4159312AJun 26, 1979
Calcium carbonate powders
SHIRAISHI KOGYO KAISHA LTD44 citations90
US4240870ADec 23, 1980
Filled paper
SHIRAISHI KOGYO KAISHA LTD9 citations73
TOSHIBA KK
5 patentsUS10861488B2Dec 8, 2020
Disk device having first and second actuator assemblies
TOSHIBA KK7 citations83
US10475475B2Nov 12, 2019
Disk apparatus and dual actuator assembly having a wiring board with a bent connection portion
TOSHIBA KK3 citations73
US11955149B1Apr 9, 2024
Disk device with positioned ramp
TOSHIBA KK2 citations70
US12456497B2Oct 28, 2025
Disk apparatus having a shock absorber between a housing of the disk apparatus and a protective cover for the disk apparatus
TOSHIBA KK0 citations62
US10825482B2Nov 3, 2020
Magnetic disk device
TOSHIBA KK0 citations50
SII SEMICONDUCTOR CORP
3 patentsUS9972625B2May 15, 2018
Method of manufacturing semiconductor integrated circuit device
SII SEMICONDUCTOR CORP0 citations52
US9698147B2Jul 4, 2017
Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors
SII SEMICONDUCTOR CORP0 citations52
US9524961B2Dec 20, 2016
Semiconductor device
SII SEMICONDUCTOR CORP0 citations40