Inventor

SCHWARTZ GERALDINE C

13 patents

Patents

13 patents

US5633522AMay 27, 1997

CMOS transistor with two-layer inverse-T tungsten gate

IBM60 citations95

US4367119AJan 4, 1983

Planar multi-level metal process with built-in etch stop

IBM78 citations95

US4675072AJun 23, 1987

Trench etch endpoint detection by LIF

IBM74 citations94

US5599725AFeb 4, 1997

Method for fabricating a MOS transistor with two-layer inverse-T tungsten gate structure

IBM40 citations92

US4447824AMay 8, 1984

Planar multi-level metal process with built-in etch stop

IBM36 citations92

US4352716AOct 5, 1982

Dry etching of copper patterns

IBM39 citations91

US5340775AAug 23, 1994

Structure and fabrication of SiCr microfuses

IBM40 citations89

US4396458AAug 2, 1983

Method for forming planar metal/insulator structures

IBM34 citations89

US5285099AFeb 8, 1994

SiCr microfuses

IBM17 citations79

US4132586AJan 2, 1979

Selective dry etching of substrates

IBM26 citations79

US4368220AJan 11, 1983

Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation

IBM8 citations74

US4183781AJan 15, 1980

Stabilization process for aluminum microcircuits which have been reactive-ion etched

IBM9 citations73

US4601939AJul 22, 1986

Composite insulator structure

IBM10 citations67