Inventor

ARIIZUMI SHOJI

JP28 patents

⚠️ This page may combine multiple inventors who share the name “ARIIZUMI SHOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ARIIZUMI SHOJI

TOKYO SHIBAURA ELECTRIC CO

Static memory having load polysilicon resistors formed over driver FET drains

Semiconductor integrated circuit device with circuits for protecting an input section against an external surge

MOS Transistor circuit with a power-down function

Electrically alterable nonvolatile memory

MOSFET buffer circuit with an improved bootstrapping circuit

MOS Static RAM layout with polysilicon resistors over FET gates

Semiconductor device

Inverter circuit provided with gate protection

Semiconductor memory device

Driver circuit having a bootstrap buffer circuit

Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device

Charge pump substrate bias with antiparasitic guard ring

Semiconductor memory device

Method of producing semiconductor devices

Static bootstrap semiconductor drive circuit

Semiconductor buffer circuit using enhancement-mode, depletion-mode and zero threshold mode transistors

Semiconductor integrated circuit device

TOSHIBA KK

Semiconductor read only memory device with selectively present mask layer

Redundancy circuit for a semiconductor memory device

Protected MOS transistor circuit

Method of making a semiconductor ROM device

Read only memory

Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device

Read only semiconductor memory device with polysilicon drain extensions

Random access memory with resistance to crystal lattice memory errors

Semiconductor memory device and method of manufacturing it

Method of manufacturing a read only semiconductor memory device

Read only memory semiconductor device