P

Inventor

KANG SUNG-TAEG

KR86 patents
⚠️ This page may combine multiple inventors who share the name “KANG SUNG-TAEG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

20 patents
US7285820B2Oct 23, 2007

Flash memory device using semiconductor fin and method thereof

SAMSUNG ELECTRONICS CO LTD263 citations99
US7005349B2Feb 28, 2006

Method of manufacturing twin-ONO-type SONOS memory using reverse self-alignment process

SAMSUNG ELECTRONICS CO LTD48 citations96
US7265411B2Sep 4, 2007

Non-volatile memory having multiple gate structure

SAMSUNG ELECTRONICS CO LTD20 citations93
US6844587B2Jan 18, 2005

Non-volatile memory device having improved programming and erasing characteristics and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations93
US7339232B2Mar 4, 2008

Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD15 citations92
US7042045B2May 9, 2006

Non-volatile memory cell having a silicon-oxide nitride-oxide-silicon gate structure

SAMSUNG ELECTRONICS CO LTD40 citations90
US6794711B2Sep 21, 2004

Non-volatile memory device having select transistor structure and SONOS cell structure and method for fabricating the device

SAMSUNG ELECTRONICS CO LTD29 citations89
US7553725B2Jun 30, 2009

Nonvolatile memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US7514739B2Apr 7, 2009

Nonvolatile semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7511334B2Mar 31, 2009

Twin-ONO-type SONOS memory

SAMSUNG ELECTRONICS CO LTD15 citations84
US7408230B2Aug 5, 2008

EEPROM device having first and second doped regions that increase an effective channel length

SAMSUNG ELECTRONICS CO LTD10 citations84
US7315057B2Jan 1, 2008

Split gate non-volatile memory devices and methods of forming same

SAMSUNG ELECTRONICS CO LTD10 citations84
US6960527B2Nov 1, 2005

Method for fabricating non-volatile memory device having sidewall gate structure and SONOS cell structure

SAMSUNG ELECTRONICS CO LTD12 citations84
US7190021B2Mar 13, 2007

Non-volatile memory device having improved programming and erasing characteristics and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations74
US7265410B2Sep 4, 2007

Non-volatile memory cell having a silicon-oxide-nitride-oxide-silicon gate structure and fabrication method of such cell

SAMSUNG ELECTRONICS CO LTD6 citations71
US7521750B2Apr 21, 2009

Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7515468B2Apr 7, 2009

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD3 citations63
US7411243B2Aug 12, 2008

Nonvolatile semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7320920B2Jan 22, 2008

Non-volatile flash memory device having at least two different channel concentrations and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7256449B2Aug 14, 2007

EEPROM device for increasing a coupling ratio and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD5 citations63

FREESCALE SEMICONDUCTOR INC

18 patents
US8901632B1Dec 2, 2014

Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodology

FREESCALE SEMICONDUCTOR INC40 citations94
US8372699B2Feb 12, 2013

Method for forming a split-gate memory cell

FREESCALE SEMICONDUCTOR INC44 citations94
US8969940B1Mar 3, 2015

Method of gate strapping in split-gate memory cell with inlaid gate

FREESCALE SEMICONDUCTOR INC21 citations92
US7821055B2Oct 26, 2010

Stressed semiconductor device and method for making

FREESCALE SEMICONDUCTOR INC37 citations91
US7811886B2Oct 12, 2010

Split-gate thin film storage NVM cell with reduced load-up/trap-up effects

FREESCALE SEMICONDUCTOR INC33 citations91
US9275864B2Mar 1, 2016

Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gates

FREESCALE SEMICONDUCTOR INC19 citations84
US9142566B2Sep 22, 2015

Method of forming different voltage devices with high-K metal gate

FREESCALE SEMICONDUCTOR INC10 citations84
US9129855B2Sep 8, 2015

Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology

FREESCALE SEMICONDUCTOR INC7 citations84
US8853027B2Oct 7, 2014

Split gate flash cell

FREESCALE SEMICONDUCTOR INC9 citations84
US7579243B2Aug 25, 2009

Split gate memory cell method

FREESCALE SEMICONDUCTOR INC18 citations84
US7985649B1Jul 26, 2011

Method of making a semiconductor structure useful in making a split gate non-volatile memory cell

FREESCALE SEMICONDUCTOR INC18 citations83
US7939880B2May 10, 2011

Split gate non-volatile memory cell

FREESCALE SEMICONDUCTOR INC11 citations83
US7799634B2Sep 21, 2010

Method of forming nanocrystals

FREESCALE SEMICONDUCTOR INC15 citations80
US9368499B2Jun 14, 2016

Method of forming different voltage devices with high-k metal gate

FREESCALE SEMICONDUCTOR INC5 citations73
US8048738B1Nov 1, 2011

Method for forming a split gate device

FREESCALE SEMICONDUCTOR INC3 citations63
US7957190B2Jun 7, 2011

Memory having P-type split gate memory cells and method of operation

FREESCALE SEMICONDUCTOR INC3 citations63
US7902022B2Mar 8, 2011

Self-aligned in-laid split gate memory and method of making

FREESCALE SEMICONDUCTOR INC5 citations63
US7871886B2Jan 18, 2011

Nanocrystal memory with differential energy bands and method of formation

FREESCALE SEMICONDUCTOR INC4 citations63

CYPRESS SEMICONDUCTOR CORP

4 patents

KANG SUNG-TAEG

4 patents

PERERA ASANGA H

2 patents

HERRICK MATTHEW T

1 patent

KOREA INST SCI & TECH

1 patent

Showing the top 50 of 86 patents by PatentIndex Score.