Inventor
KANG SUNG-TAEG
KR86 patents
⚠️ This page may combine multiple inventors who share the name “KANG SUNG-TAEG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS7285820B2Oct 23, 2007
Flash memory device using semiconductor fin and method thereof
SAMSUNG ELECTRONICS CO LTD263 citations99
US7005349B2Feb 28, 2006
Method of manufacturing twin-ONO-type SONOS memory using reverse self-alignment process
SAMSUNG ELECTRONICS CO LTD48 citations96
US7265411B2Sep 4, 2007
Non-volatile memory having multiple gate structure
SAMSUNG ELECTRONICS CO LTD20 citations93
US6844587B2Jan 18, 2005
Non-volatile memory device having improved programming and erasing characteristics and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations93
US7339232B2Mar 4, 2008
Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations92
US7042045B2May 9, 2006
Non-volatile memory cell having a silicon-oxide nitride-oxide-silicon gate structure
SAMSUNG ELECTRONICS CO LTD40 citations90
US6794711B2Sep 21, 2004
Non-volatile memory device having select transistor structure and SONOS cell structure and method for fabricating the device
SAMSUNG ELECTRONICS CO LTD29 citations89
US7553725B2Jun 30, 2009
Nonvolatile memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7514739B2Apr 7, 2009
Nonvolatile semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7511334B2Mar 31, 2009
Twin-ONO-type SONOS memory
SAMSUNG ELECTRONICS CO LTD15 citations84
US7408230B2Aug 5, 2008
EEPROM device having first and second doped regions that increase an effective channel length
SAMSUNG ELECTRONICS CO LTD10 citations84
US7315057B2Jan 1, 2008
Split gate non-volatile memory devices and methods of forming same
SAMSUNG ELECTRONICS CO LTD10 citations84
US6960527B2Nov 1, 2005
Method for fabricating non-volatile memory device having sidewall gate structure and SONOS cell structure
SAMSUNG ELECTRONICS CO LTD12 citations84
US7190021B2Mar 13, 2007
Non-volatile memory device having improved programming and erasing characteristics and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations74
US7265410B2Sep 4, 2007
Non-volatile memory cell having a silicon-oxide-nitride-oxide-silicon gate structure and fabrication method of such cell
SAMSUNG ELECTRONICS CO LTD6 citations71
US7521750B2Apr 21, 2009
Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7515468B2Apr 7, 2009
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7411243B2Aug 12, 2008
Nonvolatile semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7320920B2Jan 22, 2008
Non-volatile flash memory device having at least two different channel concentrations and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7256449B2Aug 14, 2007
EEPROM device for increasing a coupling ratio and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD5 citations63
FREESCALE SEMICONDUCTOR INC
18 patentsUS8901632B1Dec 2, 2014
Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodology
FREESCALE SEMICONDUCTOR INC40 citations94
US8372699B2Feb 12, 2013
Method for forming a split-gate memory cell
FREESCALE SEMICONDUCTOR INC44 citations94
US8969940B1Mar 3, 2015
Method of gate strapping in split-gate memory cell with inlaid gate
FREESCALE SEMICONDUCTOR INC21 citations92
US7821055B2Oct 26, 2010
Stressed semiconductor device and method for making
FREESCALE SEMICONDUCTOR INC37 citations91
US7811886B2Oct 12, 2010
Split-gate thin film storage NVM cell with reduced load-up/trap-up effects
FREESCALE SEMICONDUCTOR INC33 citations91
US9275864B2Mar 1, 2016
Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gates
FREESCALE SEMICONDUCTOR INC19 citations84
US9142566B2Sep 22, 2015
Method of forming different voltage devices with high-K metal gate
FREESCALE SEMICONDUCTOR INC10 citations84
US9129855B2Sep 8, 2015
Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology
FREESCALE SEMICONDUCTOR INC7 citations84
US8853027B2Oct 7, 2014
Split gate flash cell
FREESCALE SEMICONDUCTOR INC9 citations84
US7579243B2Aug 25, 2009
Split gate memory cell method
FREESCALE SEMICONDUCTOR INC18 citations84
US7985649B1Jul 26, 2011
Method of making a semiconductor structure useful in making a split gate non-volatile memory cell
FREESCALE SEMICONDUCTOR INC18 citations83
US7939880B2May 10, 2011
Split gate non-volatile memory cell
FREESCALE SEMICONDUCTOR INC11 citations83
US7799634B2Sep 21, 2010
Method of forming nanocrystals
FREESCALE SEMICONDUCTOR INC15 citations80
US9368499B2Jun 14, 2016
Method of forming different voltage devices with high-k metal gate
FREESCALE SEMICONDUCTOR INC5 citations73
US8048738B1Nov 1, 2011
Method for forming a split gate device
FREESCALE SEMICONDUCTOR INC3 citations63
US7957190B2Jun 7, 2011
Memory having P-type split gate memory cells and method of operation
FREESCALE SEMICONDUCTOR INC3 citations63
US7902022B2Mar 8, 2011
Self-aligned in-laid split gate memory and method of making
FREESCALE SEMICONDUCTOR INC5 citations63
US7871886B2Jan 18, 2011
Nanocrystal memory with differential energy bands and method of formation
FREESCALE SEMICONDUCTOR INC4 citations63
CYPRESS SEMICONDUCTOR CORP
4 patentsUS9853039B1Dec 26, 2017
Split-gate flash cell formed on recessed substrate
CYPRESS SEMICONDUCTOR CORP16 citations92
US12029041B2Jul 2, 2024
Method of forming high-voltage transistor with thin gate poly
CYPRESS SEMICONDUCTOR CORP1 citations73
US10872898B2Dec 22, 2020
Embedded non-volatile memory device and fabrication method of the same
CYPRESS SEMICONDUCTOR CORP4 citations73
US10242996B2Mar 26, 2019
Method of forming high-voltage transistor with thin gate poly
CYPRESS SEMICONDUCTOR CORP1 citations73
KANG SUNG-TAEG
4 patentsUS8530950B1Sep 10, 2013
Methods and structures for split gate memory
KANG SUNG-TAEG15 citations84
US8178406B2May 15, 2012
Split gate device and method for forming
KANG SUNG-TAEG7 citations84
US9165652B2Oct 20, 2015
Split-gate memory cells having select-gate sidewall metal silicide regions and related manufacturing methods
KANG SUNG-TAEG5 citations73
US8778742B1Jul 15, 2014
Methods and systems for gate dimension control in multi-gate structures for semiconductor devices
KANG SUNG-TAEG4 citations71
PERERA ASANGA H
2 patentsHERRICK MATTHEW T
1 patentKOREA INST SCI & TECH
1 patentShowing the top 50 of 86 patents by PatentIndex Score.