Inventor
YOO HYUN-KHE
KR20 patents
⚠️ This page may combine multiple inventors who share the name “YOO HYUN-KHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS7323740B2Jan 29, 2008
Single chip data processing device with embedded nonvolatile memory and method thereof
SAMSUNG ELECTRONICS CO LTD58 citations97
US6916711B2Jul 12, 2005
EEPROM memory cell and method of forming the same
SAMSUNG ELECTRONICS CO LTD24 citations92
US6744097B2Jun 1, 2004
EEPROM memory cell and method of forming the same
SAMSUNG ELECTRONICS CO LTD41 citations92
US7042045B2May 9, 2006
Non-volatile memory cell having a silicon-oxide nitride-oxide-silicon gate structure
SAMSUNG ELECTRONICS CO LTD40 citations90
US7928492B2Apr 19, 2011
Non-volatile memory integrated circuit device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US6914290B2Jul 5, 2005
Split-gate type nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD12 citations84
US7166887B2Jan 23, 2007
EEPROM device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US7038270B2May 2, 2006
Nonvolatile memory device with a non-planar gate-insulating layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations73
US7697336B2Apr 13, 2010
Non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD7 citations71
US7265410B2Sep 4, 2007
Non-volatile memory cell having a silicon-oxide-nitride-oxide-silicon gate structure and fabrication method of such cell
SAMSUNG ELECTRONICS CO LTD6 citations71
US7598139B2Oct 6, 2009
Single chip data processing device with embedded nonvolatile memory and method thereof
SAMSUNG ELECTRONICS CO LTD3 citations62
US7534688B2May 19, 2009
Nonvolatile memory device with a non-planar gate-insulating layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7387933B2Jun 17, 2008
EEPROM device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7512003B2Mar 31, 2009
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD6 citations61
US7352026B2Apr 1, 2008
EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations61
US7364973B2Apr 29, 2008
Method of manufacturing NOR-type mask ROM device and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7253058B2Aug 7, 2007
Method of manufacturing NOR-type mask ROM device and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7696561B2Apr 13, 2010
Non-volatile memory device, method of manufacturing the same and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations50