Inventor
YANG FRANK BIN
US16 patents
⚠️ This page may combine multiple inventors who share the name “YANG FRANK BIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
6 patentsUS7932143B1Apr 26, 2011
Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods
GLOBALFOUNDRIES INC32 citations92
US7670934B1Mar 2, 2010
Methods for fabricating MOS devices having epitaxially grown stress-inducing source and drain regions
GLOBALFOUNDRIES INC23 citations92
US8026539B2Sep 27, 2011
Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the same
GLOBALFOUNDRIES INC13 citations84
US7960229B2Jun 14, 2011
Metal oxide semiconductor transistor with reduced gate height, and related fabrication methods
GLOBALFOUNDRIES INC10 citations84
US7939852B2May 10, 2011
Transistor device having asymmetric embedded strain elements and related manufacturing method
GLOBALFOUNDRIES INC10 citations84
US7632727B2Dec 15, 2009
Method of forming stepped recesses for embedded strain elements in a semiconductor device
GLOBALFOUNDRIES INC1 citations52
ADVANCED MICRO DEVICES INC
4 patentsUS7767534B2Aug 3, 2010
Methods for fabricating MOS devices having highly stressed channels
ADVANCED MICRO DEVICES INC16 citations92
US7994014B2Aug 9, 2011
Semiconductor devices having faceted silicide contacts, and related fabrication methods
ADVANCED MICRO DEVICES INC11 citations84
US7829401B2Nov 9, 2010
MOSFET with asymmetrical extension implant
ADVANCED MICRO DEVICES INC5 citations73
US7521380B2Apr 21, 2009
Methods for fabricating a stress enhanced semiconductor device having narrow pitch and wide pitch transistors
ADVANCED MICRO DEVICES INC2 citations62
YANG FRANK BIN
3 patentsUS8076209B2Dec 13, 2011
Methods for fabricating MOS devices having highly stressed channels
YANG FRANK BIN17 citations91
US8120120B2Feb 21, 2012
Embedded silicon germanium source drain structure with reduced silicide encroachment and contact resistance and enhanced channel mobility
YANG FRANK BIN16 citations81
US8193592B2Jun 5, 2012
MOSFET with asymmetrical extension implant
YANG FRANK BIN0 citations51
PAL ROHIT
3 patentsUS8148750B2Apr 3, 2012
Transistor device having asymmetric embedded strain elements and related manufacturing method
PAL ROHIT5 citations73
US8293609B2Oct 23, 2012
Method of manufacturing a transistor device having asymmetric embedded strain elements
PAL ROHIT1 citations62
US8217463B2Jul 10, 2012
Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods
PAL ROHIT2 citations62