Inventor

KOHNO TAKAKI

JP16 patents

⚠️ This page may combine multiple inventors who share the name “KOHNO TAKAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

14 patents

US6396150B2May 28, 2002

Semiconductor memory device having a decoding circuit for reducing electric field stress applied to memory cells

NEC CORP51 citations92

US6310811B1Oct 30, 2001

Memory with high speed reading operation using a switchable reference matrix ensuring charging speed

NEC CORP15 citations83

US6388932B2May 14, 2002

Memory with high speed reading operation using a switchable reference matrix ensuring charging speed

NEC CORP10 citations73

US6157580ADec 5, 2000

Semiconductor memory device capable of easily controlling a reference ratio regardless of change of a process parameter

NEC CORP8 citations73

US5528544AJun 18, 1996

Semiconductor memory device having high speed sense amplifier

NEC CORP16 citations73

US5295098AMar 15, 1994

Semiconductor memory device having high-speed three-state data output buffer circuit without voltage fluctuation on power voltage lines

NEC CORP11 citations73

US5022003AJun 4, 1991

Semiconductor memory device

NEC CORP13 citations73

US6347047B2Feb 12, 2002

Mask ROM semiconductor memory device capable of synchronizing the activation of the sense amplifier and of the word line

NEC CORP4 citations62

US5617355AApr 1, 1997

Semiconductor memory device having positive feedback sense amplifier

NEC CORP3 citations62

US5565802AOct 15, 1996

Semiconductor device with differential amplifier operable at high speed

NEC CORP3 citations62

US5388071AFeb 7, 1995

Semiconductor memory device regulable in access time after fabrication thereof

NEC CORP5 citations62

NEC ELECTRONICS CORP

2 patents

US6927450B2Aug 9, 2005

Non-volatile semiconductor storage device having a salicide structure

NEC ELECTRONICS CORP14 citations83

US6788562B2Sep 7, 2004

Semiconductor memory device and write/readout controlling method error correction code decoding device

NEC ELECTRONICS CORP9 citations73

KOHNO TAKAKI

NEC CORP

Wiring structure of semiconductor device

Semiconductor memory device with precharge time improved

Semiconductor memory device regulable in access time after fabrication thereof

Semiconductor memory device having a decoding circuit for reducing electric field stress applied to memory cells

Memory with high speed reading operation using a switchable reference matrix ensuring charging speed

Memory with high speed reading operation using a switchable reference matrix ensuring charging speed

Semiconductor memory device capable of easily controlling a reference ratio regardless of change of a process parameter

Semiconductor memory device having high speed sense amplifier

Semiconductor memory device having high-speed three-state data output buffer circuit without voltage fluctuation on power voltage lines

Semiconductor memory device

Mask ROM semiconductor memory device capable of synchronizing the activation of the sense amplifier and of the word line

Semiconductor memory device having positive feedback sense amplifier

Semiconductor device with differential amplifier operable at high speed

Semiconductor memory device regulable in access time after fabrication thereof

NEC ELECTRONICS CORP

Non-volatile semiconductor storage device having a salicide structure

Semiconductor memory device and write/readout controlling method error correction code decoding device