Inventor

DMITRIEV VLADIMIR A

US30 patents

⚠️ This page may combine multiple inventors who share the name “DMITRIEV VLADIMIR A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DMITRIEV VLADIMIR A

TECHNOLOGIES AND DEVICES INTER

Method and apparatus for fabricating crack-free Group III nitride semiconductor materials

Bulk GaN and ALGaN single crystals

Method for fabricating bulk GaN single crystals

Reactor for extended duration growth of gallium containing single crystals

Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE

Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE

Method of epitaxially growing submicron group III nitride layers utilizing HVPE

Reactor for extended duration growth of gallium containing single crystals

Method for achieving low defect density GaN single crystal boules

Method for fabricating bulk AlGaN single crystals

Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE

Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE

HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby

III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer

Reactor for extended duration growth of gallium containing single crystals

Method for growing p-n heterojunction-based structures utilizing HVPE techniques

P-n heterojunction-based structures utilizing HVPE grown III-V compound layers

DMITRIEV VLADIMIR A

Method and apparatus for fabricating crack-free Group III nitride semiconductor materials

HVPE apparatus and methods for growth of p-type single crystal group III nitride materials

Apparatus and methods for controlling gas flows in a HVPE reactor

FREIBERGER COMPOUND MAT GMBH

Method for achieving low defect density AlGaN single crystal boules

Bulk GaN and AlGaN single crystals

TECHNOLOGIES & DEVICES INTERNA

III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer

CREE RESEARCH INC

Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures

TECHNOLOGIES AND DEVICES INC

Manufacturing methods for semiconductor devices with multiple III-V material layers

TECHNOLOGY AND DEVICES INTERNA

Process for producing III-V nitride pn junctions and p-i-n junctions

TECHNOLOGIES AND DEVILES INTER

Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device

OSTENDO TECHNOLOGIES INC

HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown thereby

MELNIK YURI V

Bulk GaN and AlGaN single crystals

CHIZHIKOV VLADIMIR M

Method and apparatus for weight determination of the amount of a substance possessing fluidity quality