Inventor
YUASA TAKAYUKI
JP31 patents
⚠️ This page may combine multiple inventors who share the name “YUASA TAKAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHARP KK
25 patentsUS6335546B1Jan 1, 2002
Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device
SHARP KK250 citations99
US6455877B1Sep 24, 2002
III-N compound semiconductor device
SHARP KK138 citations98
US6380051B1Apr 30, 2002
Layered structure including a nitride compound semiconductor film and method for making the same
SHARP KK96 citations98
US6252255B1Jun 26, 2001
Crystal growth method for nitride semiconductor, nitride light emitting device, and method for producing the same
SHARP KK86 citations98
US6924512B2Aug 2, 2005
Nitride semiconductor light-emitting device and optical apparatus including the same
SHARP KK59 citations96
US6620238B2Sep 16, 2003
Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device
SHARP KK58 citations96
US6518602B1Feb 11, 2003
Nitride compound semiconductor light emitting device and method for producing the same
SHARP KK70 citations96
US6420283B1Jul 16, 2002
methods for producing compound semiconductor substrates and light emitting elements
SHARP KK56 citations96
US6017774AJan 25, 2000
Method for producing group III-V compound semiconductor and fabricating light emitting device using such semiconductor
SHARP KK61 citations96
US7579627B2Aug 25, 2009
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
SHARP KK14 citations92
US7498608B2Mar 3, 2009
Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device
SHARP KK20 citations92
US7462882B2Dec 9, 2008
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
SHARP KK20 citations92
US7064357B2Jun 20, 2006
Nitride compound semiconductor light emitting device and method for producing the same
SHARP KK27 citations92
US6984841B2Jan 10, 2006
Nitride semiconductor light emitting element and production thereof
SHARP KK49 citations92
US6812496B2Nov 2, 2004
Group III nitride semiconductor laser device
SHARP KK23 citations92
US6586777B1Jul 1, 2003
Nitride semiconductor light emitting device
SHARP KK52 citations92
US7858992B2Dec 28, 2010
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
SHARP KK5 citations74
US7352012B2Apr 1, 2008
Nitride compound semiconductor light emitting device and method for producing the same
SHARP KK7 citations74
US6891201B2May 10, 2005
Nitride semiconductor laser element and optical device containing it
SHARP KK10 citations74
US6452216B1Sep 17, 2002
Nitride semiconductor light emitting device and apparatus including the same
SHARP KK13 citations74
US5995527ANov 30, 1999
Semiconductor laser device having an inn contact layer and a method of fabricating the same
SHARP KK9 citations74
US7781244B2Aug 24, 2010
Method of manufacturing nitride-composite semiconductor laser element, with disclocation control
SHARP KK1 citations63
US7663158B2Feb 16, 2010
Nitride compound semiconductor light emitting device and method for producing the same
SHARP KK4 citations63
US6685773B2Feb 3, 2004
Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same
SHARP KK3 citations63
US10269305B2Apr 23, 2019
Mirror display
SHARP KK0 citations38
CATERPILLAR JAPAN LTD
2 patentsITO SHIGETOSHI
2 patentsUS8502238B2Aug 6, 2013
Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device
ITO SHIGETOSHI0 citations49
US8334544B2Dec 18, 2012
Nitride semiconductor laser device including growth-inhibiting film at dislocation concentrated region
ITO SHIGETOSHI0 citations49