Inventor
OHNISHI SADAYUKI
JP12 patents
⚠️ This page may combine multiple inventors who share the name “OHNISHI SADAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC ELECTRONICS CORP
7 patentsUS7132732B2Nov 7, 2006
Semiconductor device having two distinct sioch layers
NEC ELECTRONICS CORP16 citations92
US7563705B2Jul 21, 2009
Manufacturing method of semiconductor device
NEC ELECTRONICS CORP10 citations83
US7420279B2Sep 2, 2008
Carbon containing silicon oxide film having high ashing tolerance and adhesion
NEC ELECTRONICS CORP13 citations81
US7102236B2Sep 5, 2006
Carbon containing silicon oxide film having high ashing tolerance and adhesion
NEC ELECTRONICS CORP6 citations70
US7833901B2Nov 16, 2010
Method for manufacturing a semiconductor device having a multi-layered insulating structure of SiOCH layers and an SiO2 layer
NEC ELECTRONICS CORP5 citations62
US7074698B2Jul 11, 2006
Method of fabricating semiconductor device using plasma-enhanced CVD
NEC ELECTRONICS CORP5 citations62
US7582970B2Sep 1, 2009
Carbon containing silicon oxide film having high ashing tolerance and adhesion
NEC ELECTRONICS CORP0 citations47