Inventor
KOMORI HIDEKI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “KOMORI HIDEKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
10 patentsUS6265268B1Jul 24, 2001
High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device
ADVANCED MICRO DEVICES INC94 citations97
US6248628B1Jun 19, 2001
Method of fabricating an ONO dielectric by nitridation for MNOS memory cells
ADVANCED MICRO DEVICES INC68 citations94
US6528390B2Mar 4, 2003
Process for fabricating a non-volatile memory device
ADVANCED MICRO DEVICES INC44 citations92
US6248635B1Jun 19, 2001
Process for fabricating a bit-line in a monos device using a dual layer hard mask
ADVANCED MICRO DEVICES INC36 citations92
US6218227B1Apr 17, 2001
Method to generate a MONOS type flash cell using polycrystalline silicon as an ONO top layer
ADVANCED MICRO DEVICES INC19 citations92
US6117730ASep 12, 2000
Integrated method by using high temperature oxide for top oxide and periphery gate oxide
ADVANCED MICRO DEVICES INC52 citations92
US6573140B1Jun 3, 2003
Process for making a dual bit memory device with isolated polysilicon floating gates
ADVANCED MICRO DEVICES INC11 citations74
US6242305B1Jun 5, 2001
Process for fabricating a bit-line using buried diffusion isolation
ADVANCED MICRO DEVICES INC10 citations74
US7202540B2Apr 10, 2007
Semiconductor memory device
ADVANCED MICRO DEVICES INC8 citations73
US6713809B1Mar 30, 2004
Dual bit memory device with isolated polysilicon floating gates
ADVANCED MICRO DEVICES INC2 citations63
FUJITSU LTD
5 patentsUS5950086ASep 7, 1999
Method of fabricating an EPROM type device with reduced process residues
FUJITSU LTD13 citations74
US6187640B1Feb 13, 2001
Semiconductor device manufacturing method including various oxidation steps with different concentration of chlorine to form a field oxide
FUJITSU LTD5 citations63
US7759745B2Jul 20, 2010
Semiconductor memory device
FUJITSU LTD2 citations62
US7482226B2Jan 27, 2009
Semiconductor memory device
FUJITSU LTD0 citations52
US6579769B2Jun 17, 2003
Semiconductor device manufacturing method including forming FOX with dual oxidation
FUJITSU LTD1 citations52
MITSUBISHI ELECTRIC CORP
2 patentsUS5534073AJul 9, 1996
Semiconductor producing apparatus comprising wafer vacuum chucking device
MITSUBISHI ELECTRIC CORP213 citations98
US5976260ANov 2, 1999
Semiconductor producing apparatus, and wafer vacuum chucking device, gas cleaning method and nitride film forming method in semiconductor producing apparatus
MITSUBISHI ELECTRIC CORP48 citations95