Inventor
RINERSON DARRELL
US100 patents
⚠️ This page may combine multiple inventors who share the name “RINERSON DARRELL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITY SEMICONDUCTOR CORP
49 patentsUS7538338B2May 26, 2009
Memory using variable tunnel barrier widths
UNITY SEMICONDUCTOR CORP144 citations99
US7020006B2Mar 28, 2006
Discharge of conductive array lines in fast memory
UNITY SEMICONDUCTOR CORP195 citations99
US6970375B2Nov 29, 2005
Providing a reference voltage to a cross point memory array
UNITY SEMICONDUCTOR CORP108 citations99
US6965137B2Nov 15, 2005
Multi-layer conductive memory device
UNITY SEMICONDUCTOR CORP168 citations99
US6917539B2Jul 12, 2005
High-density NVRAM
UNITY SEMICONDUCTOR CORP134 citations99
US6859382B2Feb 22, 2005
Memory array of a non-volatile ram
UNITY SEMICONDUCTOR CORP133 citations99
US6856536B2Feb 15, 2005
Non-volatile memory with a single transistor and resistive memory element
UNITY SEMICONDUCTOR CORP170 citations99
US6836421B2Dec 28, 2004
Line drivers that fit within a specified line pitch
UNITY SEMICONDUCTOR CORP149 citations99
US6834008B2Dec 21, 2004
Cross point memory array using multiple modes of operation
UNITY SEMICONDUCTOR CORP161 citations99
US6753561B1Jun 22, 2004
Cross point memory array using multiple thin films
UNITY SEMICONDUCTOR CORP425 citations99
US7884349B2Feb 8, 2011
Selection device for re-writable memory
UNITY SEMICONDUCTOR CORP76 citations98
US7701791B2Apr 20, 2010
Low read current architecture for memory
UNITY SEMICONDUCTOR CORP73 citations98
US7400006B1Jul 15, 2008
Conductive memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP58 citations98
US7379364B2May 27, 2008
Sensing a signal in a two-terminal memory array having leakage current
UNITY SEMICONDUCTOR CORP99 citations98
US7372753B1May 13, 2008
Two-cycle sensing in a two-terminal memory array having leakage current
UNITY SEMICONDUCTOR CORP109 citations98
US7149108B2Dec 12, 2006
Memory array of a non-volatile RAM
UNITY SEMICONDUCTOR CORP73 citations98
US7079442B2Jul 18, 2006
Layout of driver sets in a cross point memory array
UNITY SEMICONDUCTOR CORP71 citations98
US7075817B2Jul 11, 2006
Two terminal memory array having reference cells
UNITY SEMICONDUCTOR CORP66 citations98
US7071008B2Jul 4, 2006
Multi-resistive state material that uses dopants
UNITY SEMICONDUCTOR CORP69 citations98
US7067862B2Jun 27, 2006
Conductive memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP142 citations98
US7057914B2Jun 6, 2006
Cross point memory array with fast access time
UNITY SEMICONDUCTOR CORP72 citations98
US7054183B2May 30, 2006
Adaptive programming technique for a re-writable conductive memory device
UNITY SEMICONDUCTOR CORP104 citations98
US7038935B2May 2, 2006
2-terminal trapped charge memory device with voltage switchable multi-level resistance
UNITY SEMICONDUCTOR CORP85 citations98
US7009909B2Mar 7, 2006
Line drivers that use minimal metal layers
UNITY SEMICONDUCTOR CORP78 citations98
US6940744B2Sep 6, 2005
Adaptive programming technique for a re-writable conductive memory device
UNITY SEMICONDUCTOR CORP100 citations98
US6870755B2Mar 22, 2005
Re-writable memory with non-linear memory element
UNITY SEMICONDUCTOR CORP137 citations98
US6850429B2Feb 1, 2005
Cross point memory array with memory plugs exhibiting a characteristic hysteresis
UNITY SEMICONDUCTOR CORP73 citations98
US6850455B2Feb 1, 2005
Multiplexor having a reference voltage on unselected lines
UNITY SEMICONDUCTOR CORP106 citations98
US6831854B2Dec 14, 2004
Cross point memory array using distinct voltages
UNITY SEMICONDUCTOR CORP72 citations98
US7742323B2Jun 22, 2010
Continuous plane of thin-film materials for a two-terminal cross-point memory
UNITY SEMICONDUCTOR CORP56 citations97
US7889539B2Feb 15, 2011
Multi-resistive state memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP19 citations96
US7633790B2Dec 15, 2009
Multi-resistive state memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP23 citations96
US7394679B2Jul 1, 2008
Multi-resistive state element with reactive metal
UNITY SEMICONDUCTOR CORP20 citations96
US7082052B2Jul 25, 2006
Multi-resistive state element with reactive metal
UNITY SEMICONDUCTOR CORP35 citations96
US6972985B2Dec 6, 2005
Memory element having islands
UNITY SEMICONDUCTOR CORP55 citations96
US6906939B2Jun 14, 2005
Re-writable memory with multiple memory layers
UNITY SEMICONDUCTOR CORP56 citations96
US6798685B2Sep 28, 2004
Multi-output multiplexor
UNITY SEMICONDUCTOR CORP60 citations96
US7505347B2Mar 17, 2009
Method for sensing a signal in a two-terminal memory array having leakage current
UNITY SEMICONDUCTOR CORP26 citations93
US7457147B2Nov 25, 2008
Two terminal memory array having reference cells
UNITY SEMICONDUCTOR CORP15 citations93
US7439082B2Oct 21, 2008
Conductive memory stack with non-uniform width
UNITY SEMICONDUCTOR CORP20 citations93
US7436723B2Oct 14, 2008
Method for two-cycle sensing in a two-terminal memory array having leakage current
UNITY SEMICONDUCTOR CORP30 citations93
US7330370B2Feb 12, 2008
Enhanced functionality in a two-terminal memory array
UNITY SEMICONDUCTOR CORP19 citations93
US7327601B2Feb 5, 2008
Providing a reference voltage to a cross point memory array
UNITY SEMICONDUCTOR CORP15 citations93
US7227775B2Jun 5, 2007
Two terminal memory array having reference cells
UNITY SEMICONDUCTOR CORP30 citations93
US7149107B2Dec 12, 2006
Providing a reference voltage to a cross point memory array
UNITY SEMICONDUCTOR CORP21 citations93
US7126841B2Oct 24, 2006
Non-volatile memory with a single transistor and resistive memory element
UNITY SEMICONDUCTOR CORP20 citations93
US7099179B2Aug 29, 2006
Conductive memory array having page mode and burst mode write capability
UNITY SEMICONDUCTOR CORP21 citations93
US7095644B2Aug 22, 2006
Conductive memory array having page mode and burst mode read capability
UNITY SEMICONDUCTOR CORP24 citations93
US7042035B2May 9, 2006
Memory array with high temperature wiring
UNITY SEMICONDUCTOR CORP45 citations93
SIAU CHANG HUA
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