Inventor
LONGCOR STEVEN W
US48 patents
⚠️ This page may combine multiple inventors who share the name “LONGCOR STEVEN W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITY SEMICONDUCTOR CORP
40 patentsUS6970375B2Nov 29, 2005
Providing a reference voltage to a cross point memory array
UNITY SEMICONDUCTOR CORP108 citations99
US6965137B2Nov 15, 2005
Multi-layer conductive memory device
UNITY SEMICONDUCTOR CORP168 citations99
US6917539B2Jul 12, 2005
High-density NVRAM
UNITY SEMICONDUCTOR CORP134 citations99
US6834008B2Dec 21, 2004
Cross point memory array using multiple modes of operation
UNITY SEMICONDUCTOR CORP161 citations99
US6753561B1Jun 22, 2004
Cross point memory array using multiple thin films
UNITY SEMICONDUCTOR CORP425 citations99
US7884349B2Feb 8, 2011
Selection device for re-writable memory
UNITY SEMICONDUCTOR CORP76 citations98
US7400006B1Jul 15, 2008
Conductive memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP58 citations98
US7079442B2Jul 18, 2006
Layout of driver sets in a cross point memory array
UNITY SEMICONDUCTOR CORP71 citations98
US7075817B2Jul 11, 2006
Two terminal memory array having reference cells
UNITY SEMICONDUCTOR CORP66 citations98
US7071008B2Jul 4, 2006
Multi-resistive state material that uses dopants
UNITY SEMICONDUCTOR CORP69 citations98
US7067862B2Jun 27, 2006
Conductive memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP142 citations98
US7038935B2May 2, 2006
2-terminal trapped charge memory device with voltage switchable multi-level resistance
UNITY SEMICONDUCTOR CORP85 citations98
US7009909B2Mar 7, 2006
Line drivers that use minimal metal layers
UNITY SEMICONDUCTOR CORP78 citations98
US6870755B2Mar 22, 2005
Re-writable memory with non-linear memory element
UNITY SEMICONDUCTOR CORP137 citations98
US6850429B2Feb 1, 2005
Cross point memory array with memory plugs exhibiting a characteristic hysteresis
UNITY SEMICONDUCTOR CORP73 citations98
US6831854B2Dec 14, 2004
Cross point memory array using distinct voltages
UNITY SEMICONDUCTOR CORP72 citations98
US7889539B2Feb 15, 2011
Multi-resistive state memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP19 citations96
US7633790B2Dec 15, 2009
Multi-resistive state memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP23 citations96
US7394679B2Jul 1, 2008
Multi-resistive state element with reactive metal
UNITY SEMICONDUCTOR CORP20 citations96
US7082052B2Jul 25, 2006
Multi-resistive state element with reactive metal
UNITY SEMICONDUCTOR CORP35 citations96
US6972985B2Dec 6, 2005
Memory element having islands
UNITY SEMICONDUCTOR CORP55 citations96
US6906939B2Jun 14, 2005
Re-writable memory with multiple memory layers
UNITY SEMICONDUCTOR CORP56 citations96
US6798685B2Sep 28, 2004
Multi-output multiplexor
UNITY SEMICONDUCTOR CORP60 citations96
US7457147B2Nov 25, 2008
Two terminal memory array having reference cells
UNITY SEMICONDUCTOR CORP15 citations93
US7439082B2Oct 21, 2008
Conductive memory stack with non-uniform width
UNITY SEMICONDUCTOR CORP20 citations93
US7330370B2Feb 12, 2008
Enhanced functionality in a two-terminal memory array
UNITY SEMICONDUCTOR CORP19 citations93
US7227775B2Jun 5, 2007
Two terminal memory array having reference cells
UNITY SEMICONDUCTOR CORP30 citations93
US7042035B2May 9, 2006
Memory array with high temperature wiring
UNITY SEMICONDUCTOR CORP45 citations93
US7020012B2Mar 28, 2006
Cross point array using distinct voltages
UNITY SEMICONDUCTOR CORP27 citations93
US7009235B2Mar 7, 2006
Conductive memory stack with non-uniform width
UNITY SEMICONDUCTOR CORP25 citations93
US6909632B2Jun 21, 2005
Multiple modes of operation in a cross point array
UNITY SEMICONDUCTOR CORP21 citations93
US8003511B2Aug 23, 2011
Memory cell formation using ion implant isolated conductive metal oxide
UNITY SEMICONDUCTOR CORP26 citations92
US7326979B2Feb 5, 2008
Resistive memory device with a treated interface
UNITY SEMICONDUCTOR CORP51 citations92
US7186569B2Mar 6, 2007
Conductive memory stack with sidewall
UNITY SEMICONDUCTOR CORP20 citations91
US7528405B2May 5, 2009
Conductive memory stack with sidewall
UNITY SEMICONDUCTOR CORP9 citations84
US7180772B2Feb 20, 2007
High-density NVRAM
UNITY SEMICONDUCTOR CORP11 citations84
US7095643B2Aug 22, 2006
Re-writable memory with multiple memory layers
UNITY SEMICONDUCTOR CORP16 citations84
US7832090B1Nov 16, 2010
Method of making a planar electrode
UNITY SEMICONDUCTOR CORP6 citations63
US7382644B2Jun 3, 2008
Two terminal memory array having reference cells
UNITY SEMICONDUCTOR CORP3 citations63
US7382645B2Jun 3, 2008
Two terminal memory array having reference cells
UNITY SEMICONDUCTOR CORP2 citations63
ADVANCED MICRO DEVICES INC
5 patentsUS4987465AJan 22, 1991
Electro-static discharge protection device for CMOS integrated circuit inputs
ADVANCED MICRO DEVICES INC71 citations96
US5680345AOct 21, 1997
Nonvolatile memory cell with vertical gate overlap and zero birds beaks
ADVANCED MICRO DEVICES INC80 citations95
US5661055AAug 26, 1997
Method of making nonvolatile memory cell with vertical gate overlap and zero birds' beaks
ADVANCED MICRO DEVICES INC50 citations95
US5552331ASep 3, 1996
Process for self-aligned source for high density memory
ADVANCED MICRO DEVICES INC38 citations92
US5151381ASep 29, 1992
Method for local oxidation of silicon employing two oxidation steps
ADVANCED MICRO DEVICES INC42 citations86