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Inventor

LONGCOR STEVEN W

US48 patents
⚠️ This page may combine multiple inventors who share the name “LONGCOR STEVEN W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITY SEMICONDUCTOR CORP

40 patents
US6970375B2Nov 29, 2005

Providing a reference voltage to a cross point memory array

UNITY SEMICONDUCTOR CORP108 citations99
US6965137B2Nov 15, 2005

Multi-layer conductive memory device

UNITY SEMICONDUCTOR CORP168 citations99
US6917539B2Jul 12, 2005

High-density NVRAM

UNITY SEMICONDUCTOR CORP134 citations99
US6834008B2Dec 21, 2004

Cross point memory array using multiple modes of operation

UNITY SEMICONDUCTOR CORP161 citations99
US6753561B1Jun 22, 2004

Cross point memory array using multiple thin films

UNITY SEMICONDUCTOR CORP425 citations99
US7884349B2Feb 8, 2011

Selection device for re-writable memory

UNITY SEMICONDUCTOR CORP76 citations98
US7400006B1Jul 15, 2008

Conductive memory device with conductive oxide electrodes

UNITY SEMICONDUCTOR CORP58 citations98
US7079442B2Jul 18, 2006

Layout of driver sets in a cross point memory array

UNITY SEMICONDUCTOR CORP71 citations98
US7075817B2Jul 11, 2006

Two terminal memory array having reference cells

UNITY SEMICONDUCTOR CORP66 citations98
US7071008B2Jul 4, 2006

Multi-resistive state material that uses dopants

UNITY SEMICONDUCTOR CORP69 citations98
US7067862B2Jun 27, 2006

Conductive memory device with conductive oxide electrodes

UNITY SEMICONDUCTOR CORP142 citations98
US7038935B2May 2, 2006

2-terminal trapped charge memory device with voltage switchable multi-level resistance

UNITY SEMICONDUCTOR CORP85 citations98
US7009909B2Mar 7, 2006

Line drivers that use minimal metal layers

UNITY SEMICONDUCTOR CORP78 citations98
US6870755B2Mar 22, 2005

Re-writable memory with non-linear memory element

UNITY SEMICONDUCTOR CORP137 citations98
US6850429B2Feb 1, 2005

Cross point memory array with memory plugs exhibiting a characteristic hysteresis

UNITY SEMICONDUCTOR CORP73 citations98
US6831854B2Dec 14, 2004

Cross point memory array using distinct voltages

UNITY SEMICONDUCTOR CORP72 citations98
US7889539B2Feb 15, 2011

Multi-resistive state memory device with conductive oxide electrodes

UNITY SEMICONDUCTOR CORP19 citations96
US7633790B2Dec 15, 2009

Multi-resistive state memory device with conductive oxide electrodes

UNITY SEMICONDUCTOR CORP23 citations96
US7394679B2Jul 1, 2008

Multi-resistive state element with reactive metal

UNITY SEMICONDUCTOR CORP20 citations96
US7082052B2Jul 25, 2006

Multi-resistive state element with reactive metal

UNITY SEMICONDUCTOR CORP35 citations96
US6972985B2Dec 6, 2005

Memory element having islands

UNITY SEMICONDUCTOR CORP55 citations96
US6906939B2Jun 14, 2005

Re-writable memory with multiple memory layers

UNITY SEMICONDUCTOR CORP56 citations96
US6798685B2Sep 28, 2004

Multi-output multiplexor

UNITY SEMICONDUCTOR CORP60 citations96
US7457147B2Nov 25, 2008

Two terminal memory array having reference cells

UNITY SEMICONDUCTOR CORP15 citations93
US7439082B2Oct 21, 2008

Conductive memory stack with non-uniform width

UNITY SEMICONDUCTOR CORP20 citations93
US7330370B2Feb 12, 2008

Enhanced functionality in a two-terminal memory array

UNITY SEMICONDUCTOR CORP19 citations93
US7227775B2Jun 5, 2007

Two terminal memory array having reference cells

UNITY SEMICONDUCTOR CORP30 citations93
US7042035B2May 9, 2006

Memory array with high temperature wiring

UNITY SEMICONDUCTOR CORP45 citations93
US7020012B2Mar 28, 2006

Cross point array using distinct voltages

UNITY SEMICONDUCTOR CORP27 citations93
US7009235B2Mar 7, 2006

Conductive memory stack with non-uniform width

UNITY SEMICONDUCTOR CORP25 citations93
US6909632B2Jun 21, 2005

Multiple modes of operation in a cross point array

UNITY SEMICONDUCTOR CORP21 citations93
US8003511B2Aug 23, 2011

Memory cell formation using ion implant isolated conductive metal oxide

UNITY SEMICONDUCTOR CORP26 citations92
US7326979B2Feb 5, 2008

Resistive memory device with a treated interface

UNITY SEMICONDUCTOR CORP51 citations92
US7186569B2Mar 6, 2007

Conductive memory stack with sidewall

UNITY SEMICONDUCTOR CORP20 citations91
US7528405B2May 5, 2009

Conductive memory stack with sidewall

UNITY SEMICONDUCTOR CORP9 citations84
US7180772B2Feb 20, 2007

High-density NVRAM

UNITY SEMICONDUCTOR CORP11 citations84
US7095643B2Aug 22, 2006

Re-writable memory with multiple memory layers

UNITY SEMICONDUCTOR CORP16 citations84
US7832090B1Nov 16, 2010

Method of making a planar electrode

UNITY SEMICONDUCTOR CORP6 citations63
US7382644B2Jun 3, 2008

Two terminal memory array having reference cells

UNITY SEMICONDUCTOR CORP3 citations63
US7382645B2Jun 3, 2008

Two terminal memory array having reference cells

UNITY SEMICONDUCTOR CORP2 citations63

ADVANCED MICRO DEVICES INC

5 patents

INTEGRATED SILICON SOLUTION

1 patent

RINERSON DARRELL

1 patent

NEXFLASH TECHNOLOGIES INC

1 patent