Inventor
WARD EDMOND R
US30 patents
⚠️ This page may combine multiple inventors who share the name “WARD EDMOND R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITY SEMICONDUCTOR CORP
21 patentsUS6970375B2Nov 29, 2005
Providing a reference voltage to a cross point memory array
UNITY SEMICONDUCTOR CORP108 citations99
US6917539B2Jul 12, 2005
High-density NVRAM
UNITY SEMICONDUCTOR CORP134 citations99
US6834008B2Dec 21, 2004
Cross point memory array using multiple modes of operation
UNITY SEMICONDUCTOR CORP161 citations99
US6753561B1Jun 22, 2004
Cross point memory array using multiple thin films
UNITY SEMICONDUCTOR CORP425 citations99
US7079442B2Jul 18, 2006
Layout of driver sets in a cross point memory array
UNITY SEMICONDUCTOR CORP71 citations98
US7071008B2Jul 4, 2006
Multi-resistive state material that uses dopants
UNITY SEMICONDUCTOR CORP69 citations98
US7067862B2Jun 27, 2006
Conductive memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP142 citations98
US7038935B2May 2, 2006
2-terminal trapped charge memory device with voltage switchable multi-level resistance
UNITY SEMICONDUCTOR CORP85 citations98
US7009909B2Mar 7, 2006
Line drivers that use minimal metal layers
UNITY SEMICONDUCTOR CORP78 citations98
US6870755B2Mar 22, 2005
Re-writable memory with non-linear memory element
UNITY SEMICONDUCTOR CORP137 citations98
US6850429B2Feb 1, 2005
Cross point memory array with memory plugs exhibiting a characteristic hysteresis
UNITY SEMICONDUCTOR CORP73 citations98
US6831854B2Dec 14, 2004
Cross point memory array using distinct voltages
UNITY SEMICONDUCTOR CORP72 citations98
US6906939B2Jun 14, 2005
Re-writable memory with multiple memory layers
UNITY SEMICONDUCTOR CORP56 citations96
US7042035B2May 9, 2006
Memory array with high temperature wiring
UNITY SEMICONDUCTOR CORP45 citations93
US7020012B2Mar 28, 2006
Cross point array using distinct voltages
UNITY SEMICONDUCTOR CORP27 citations93
US6909632B2Jun 21, 2005
Multiple modes of operation in a cross point array
UNITY SEMICONDUCTOR CORP21 citations93
US9806130B2Oct 31, 2017
Memory element with a reactive metal layer
UNITY SEMICONDUCTOR CORP10 citations92
US9570515B2Feb 14, 2017
Memory element with a reactive metal layer
UNITY SEMICONDUCTOR CORP12 citations92
US9159408B2Oct 13, 2015
Memory element with a reactive metal layer
UNITY SEMICONDUCTOR CORP12 citations92
US7180772B2Feb 20, 2007
High-density NVRAM
UNITY SEMICONDUCTOR CORP11 citations84
US7095643B2Aug 22, 2006
Re-writable memory with multiple memory layers
UNITY SEMICONDUCTOR CORP16 citations84
SILICON VALLEY GROUP
3 patentsHEFEI RELIANCE MEMORY LTD
3 patentsUS10340312B2Jul 2, 2019
Memory element with a reactive metal layer
HEFEI RELIANCE MEMORY LTD6 citations84
US11502249B2Nov 15, 2022
Memory element with a reactive metal layer
HEFEI RELIANCE MEMORY LTD0 citations73
US10833125B2Nov 10, 2020
Memory element with a reactive metal layer
HEFEI RELIANCE MEMORY LTD0 citations62