P

Inventor

KINNEY WAYNE

US81 patents
⚠️ This page may combine multiple inventors who share the name “KINNEY WAYNE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITY SEMICONDUCTOR CORP

34 patents
US7538338B2May 26, 2009

Memory using variable tunnel barrier widths

UNITY SEMICONDUCTOR CORP144 citations99
US6970375B2Nov 29, 2005

Providing a reference voltage to a cross point memory array

UNITY SEMICONDUCTOR CORP108 citations99
US6965137B2Nov 15, 2005

Multi-layer conductive memory device

UNITY SEMICONDUCTOR CORP168 citations99
US6917539B2Jul 12, 2005

High-density NVRAM

UNITY SEMICONDUCTOR CORP134 citations99
US6834008B2Dec 21, 2004

Cross point memory array using multiple modes of operation

UNITY SEMICONDUCTOR CORP161 citations99
US6753561B1Jun 22, 2004

Cross point memory array using multiple thin films

UNITY SEMICONDUCTOR CORP425 citations99
US8848425B2Sep 30, 2014

Conductive metal oxide structures in non volatile re-writable memory devices

UNITY SEMICONDUCTOR CORP59 citations98
US8045364B2Oct 25, 2011

Non-volatile memory device ion barrier

UNITY SEMICONDUCTOR CORP121 citations98
US7884349B2Feb 8, 2011

Selection device for re-writable memory

UNITY SEMICONDUCTOR CORP76 citations98
US7400006B1Jul 15, 2008

Conductive memory device with conductive oxide electrodes

UNITY SEMICONDUCTOR CORP58 citations98
US7079442B2Jul 18, 2006

Layout of driver sets in a cross point memory array

UNITY SEMICONDUCTOR CORP71 citations98
US7071008B2Jul 4, 2006

Multi-resistive state material that uses dopants

UNITY SEMICONDUCTOR CORP69 citations98
US7067862B2Jun 27, 2006

Conductive memory device with conductive oxide electrodes

UNITY SEMICONDUCTOR CORP142 citations98
US7038935B2May 2, 2006

2-terminal trapped charge memory device with voltage switchable multi-level resistance

UNITY SEMICONDUCTOR CORP85 citations98
US6870755B2Mar 22, 2005

Re-writable memory with non-linear memory element

UNITY SEMICONDUCTOR CORP137 citations98
US6850429B2Feb 1, 2005

Cross point memory array with memory plugs exhibiting a characteristic hysteresis

UNITY SEMICONDUCTOR CORP73 citations98
US7889539B2Feb 15, 2011

Multi-resistive state memory device with conductive oxide electrodes

UNITY SEMICONDUCTOR CORP19 citations96
US7633790B2Dec 15, 2009

Multi-resistive state memory device with conductive oxide electrodes

UNITY SEMICONDUCTOR CORP23 citations96
US7394679B2Jul 1, 2008

Multi-resistive state element with reactive metal

UNITY SEMICONDUCTOR CORP20 citations96
US7082052B2Jul 25, 2006

Multi-resistive state element with reactive metal

UNITY SEMICONDUCTOR CORP35 citations96
US6906939B2Jun 14, 2005

Re-writable memory with multiple memory layers

UNITY SEMICONDUCTOR CORP56 citations96
US7042035B2May 9, 2006

Memory array with high temperature wiring

UNITY SEMICONDUCTOR CORP45 citations93
US6909632B2Jun 21, 2005

Multiple modes of operation in a cross point array

UNITY SEMICONDUCTOR CORP21 citations93
US9806130B2Oct 31, 2017

Memory element with a reactive metal layer

UNITY SEMICONDUCTOR CORP10 citations92
US9570515B2Feb 14, 2017

Memory element with a reactive metal layer

UNITY SEMICONDUCTOR CORP12 citations92
US9159408B2Oct 13, 2015

Memory element with a reactive metal layer

UNITY SEMICONDUCTOR CORP12 citations92
US8031509B2Oct 4, 2011

Conductive metal oxide structures in non-volatile re-writable memory devices

UNITY SEMICONDUCTOR CORP13 citations92
US7995371B2Aug 9, 2011

Threshold device for a memory array

UNITY SEMICONDUCTOR CORP30 citations92
US7985963B2Jul 26, 2011

Memory using variable tunnel barrier widths

UNITY SEMICONDUCTOR CORP36 citations92
US7326979B2Feb 5, 2008

Resistive memory device with a treated interface

UNITY SEMICONDUCTOR CORP51 citations92
US7186569B2Mar 6, 2007

Conductive memory stack with sidewall

UNITY SEMICONDUCTOR CORP20 citations91
US9159913B2Oct 13, 2015

Two-terminal reversibly switchable memory device

UNITY SEMICONDUCTOR CORP6 citations84
US8031510B2Oct 4, 2011

Ion barrier cap

UNITY SEMICONDUCTOR CORP9 citations84
US7180772B2Feb 20, 2007

High-density NVRAM

UNITY SEMICONDUCTOR CORP11 citations84

MICRON TECHNOLOGY INC

11 patents

HEFEI RELIANCE MEMORY LTD

2 patents

RINERSON DARRELL

1 patent

CHEVALLIER CHRISTOPHE

1 patent

OVONYX MEMORY TECH LLC

1 patent

Showing the top 50 of 81 patents by PatentIndex Score.