Inventor
KINNEY WAYNE
US81 patents
⚠️ This page may combine multiple inventors who share the name “KINNEY WAYNE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITY SEMICONDUCTOR CORP
34 patentsUS7538338B2May 26, 2009
Memory using variable tunnel barrier widths
UNITY SEMICONDUCTOR CORP144 citations99
US6970375B2Nov 29, 2005
Providing a reference voltage to a cross point memory array
UNITY SEMICONDUCTOR CORP108 citations99
US6965137B2Nov 15, 2005
Multi-layer conductive memory device
UNITY SEMICONDUCTOR CORP168 citations99
US6917539B2Jul 12, 2005
High-density NVRAM
UNITY SEMICONDUCTOR CORP134 citations99
US6834008B2Dec 21, 2004
Cross point memory array using multiple modes of operation
UNITY SEMICONDUCTOR CORP161 citations99
US6753561B1Jun 22, 2004
Cross point memory array using multiple thin films
UNITY SEMICONDUCTOR CORP425 citations99
US8848425B2Sep 30, 2014
Conductive metal oxide structures in non volatile re-writable memory devices
UNITY SEMICONDUCTOR CORP59 citations98
US8045364B2Oct 25, 2011
Non-volatile memory device ion barrier
UNITY SEMICONDUCTOR CORP121 citations98
US7884349B2Feb 8, 2011
Selection device for re-writable memory
UNITY SEMICONDUCTOR CORP76 citations98
US7400006B1Jul 15, 2008
Conductive memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP58 citations98
US7079442B2Jul 18, 2006
Layout of driver sets in a cross point memory array
UNITY SEMICONDUCTOR CORP71 citations98
US7071008B2Jul 4, 2006
Multi-resistive state material that uses dopants
UNITY SEMICONDUCTOR CORP69 citations98
US7067862B2Jun 27, 2006
Conductive memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP142 citations98
US7038935B2May 2, 2006
2-terminal trapped charge memory device with voltage switchable multi-level resistance
UNITY SEMICONDUCTOR CORP85 citations98
US6870755B2Mar 22, 2005
Re-writable memory with non-linear memory element
UNITY SEMICONDUCTOR CORP137 citations98
US6850429B2Feb 1, 2005
Cross point memory array with memory plugs exhibiting a characteristic hysteresis
UNITY SEMICONDUCTOR CORP73 citations98
US7889539B2Feb 15, 2011
Multi-resistive state memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP19 citations96
US7633790B2Dec 15, 2009
Multi-resistive state memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP23 citations96
US7394679B2Jul 1, 2008
Multi-resistive state element with reactive metal
UNITY SEMICONDUCTOR CORP20 citations96
US7082052B2Jul 25, 2006
Multi-resistive state element with reactive metal
UNITY SEMICONDUCTOR CORP35 citations96
US6906939B2Jun 14, 2005
Re-writable memory with multiple memory layers
UNITY SEMICONDUCTOR CORP56 citations96
US7042035B2May 9, 2006
Memory array with high temperature wiring
UNITY SEMICONDUCTOR CORP45 citations93
US6909632B2Jun 21, 2005
Multiple modes of operation in a cross point array
UNITY SEMICONDUCTOR CORP21 citations93
US9806130B2Oct 31, 2017
Memory element with a reactive metal layer
UNITY SEMICONDUCTOR CORP10 citations92
US9570515B2Feb 14, 2017
Memory element with a reactive metal layer
UNITY SEMICONDUCTOR CORP12 citations92
US9159408B2Oct 13, 2015
Memory element with a reactive metal layer
UNITY SEMICONDUCTOR CORP12 citations92
US8031509B2Oct 4, 2011
Conductive metal oxide structures in non-volatile re-writable memory devices
UNITY SEMICONDUCTOR CORP13 citations92
US7995371B2Aug 9, 2011
Threshold device for a memory array
UNITY SEMICONDUCTOR CORP30 citations92
US7985963B2Jul 26, 2011
Memory using variable tunnel barrier widths
UNITY SEMICONDUCTOR CORP36 citations92
US7326979B2Feb 5, 2008
Resistive memory device with a treated interface
UNITY SEMICONDUCTOR CORP51 citations92
US7186569B2Mar 6, 2007
Conductive memory stack with sidewall
UNITY SEMICONDUCTOR CORP20 citations91
US9159913B2Oct 13, 2015
Two-terminal reversibly switchable memory device
UNITY SEMICONDUCTOR CORP6 citations84
US8031510B2Oct 4, 2011
Ion barrier cap
UNITY SEMICONDUCTOR CORP9 citations84
US7180772B2Feb 20, 2007
High-density NVRAM
UNITY SEMICONDUCTOR CORP11 citations84
MICRON TECHNOLOGY INC
11 patentsUS5955758ASep 21, 1999
Method of forming a capacitor plate and a capacitor incorporating same
MICRON TECHNOLOGY INC123 citations99
US5654222AAug 5, 1997
Method for forming a capacitor with electrically interconnected construction
MICRON TECHNOLOGY INC195 citations99
US9613676B1Apr 4, 2017
Writing to cross-point non-volatile memory
MICRON TECHNOLOGY INC68 citations98
US9472560B2Oct 18, 2016
Memory cell and an array of memory cells
MICRON TECHNOLOGY INC92 citations98
US5985714ANov 16, 1999
Method of forming a capacitor
MICRON TECHNOLOGY INC56 citations96
US10636471B2Apr 28, 2020
Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays
MICRON TECHNOLOGY INC15 citations94
US9928894B2Mar 27, 2018
Writing to cross-point non-volatile memory
MICRON TECHNOLOGY INC5 citations84
US9715419B2Jul 25, 2017
Selective reading of memory with improved accuracy
MICRON TECHNOLOGY INC4 citations84
US9025364B2May 5, 2015
Selective self-reference read
MICRON TECHNOLOGY INC7 citations84
US8796751B2Aug 5, 2014
Transistors, memory cells and semiconductor constructions
MICRON TECHNOLOGY INC8 citations84
US9590066B2Mar 7, 2017
Transistors, memory cells and semiconductor constructions
MICRON TECHNOLOGY INC5 citations82
HEFEI RELIANCE MEMORY LTD
2 patentsRINERSON DARRELL
1 patentCHEVALLIER CHRISTOPHE
1 patentOVONYX MEMORY TECH LLC
1 patentShowing the top 50 of 81 patents by PatentIndex Score.