Inventor
KANZAWA YOSHIHIKO
JP45 patents
⚠️ This page may combine multiple inventors who share the name “KANZAWA YOSHIHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
17 patentsUS6852602B2Feb 8, 2005
Semiconductor crystal film and method for preparation thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD103 citations98
US6674150B2Jan 6, 2004
Heterojunction bipolar transistor and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD58 citations96
US6492711B1Dec 10, 2002
Heterojunction bipolar transistor and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD59 citations96
US6399993B1Jun 4, 2002
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD67 citations96
US6455364B1Sep 24, 2002
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD55 citations95
US6645836B2Nov 11, 2003
Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations92
US6537369B1Mar 25, 2003
SiGeC semiconductor crystal and production method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations92
US6403976B1Jun 11, 2002
Semiconductor crystal, fabrication method thereof, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD37 citations92
US6858454B1Feb 22, 2005
Method for measuring semiconductor constituent element content and method for manufacturing a semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US6720587B2Apr 13, 2004
Structure evaluation method, method for manufacturing semiconductor devices, and recording medium
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6660393B2Dec 9, 2003
SiGeC semiconductor crystals and the method producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
US6838395B1Jan 4, 2005
Method for fabricating a semiconductor crystal
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations73
US6821870B2Nov 23, 2004
Heterojunction bipolar transistor and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6649496B2Nov 18, 2003
Production method for semiconductor crystal
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US6987072B2Jan 17, 2006
Method of producing semiconductor crystal
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations62
US6713790B2Mar 30, 2004
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations62
US6930026B2Aug 16, 2005
Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52
PANASONIC CORP
7 patentsUS8022502B2Sep 20, 2011
Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
PANASONIC CORP60 citations98
US7920408B2Apr 5, 2011
Resistance change nonvolatile memory device
PANASONIC CORP66 citations98
US7719031B2May 18, 2010
Heterojunction biploar transistor and method for manufacturing same
PANASONIC CORP9 citations84
US7473967B2Jan 6, 2009
Strained channel finFET device
PANASONIC CORP19 citations81
US9183926B2Nov 10, 2015
Method for driving nonvolatile storage element, and nonvolatile storage device
PANASONIC CORP4 citations73
US8830730B2Sep 9, 2014
Variable resistance nonvolatile storage device and method of forming memory cell
PANASONIC CORP1 citations52
US7986002B2Jul 26, 2011
FINFET-type semiconductor device and method for fabricating the same
PANASONIC CORP1 citations52
KANZAWA YOSHIHIKO
7 patentsUS8445319B2May 21, 2013
Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
KANZAWA YOSHIHIKO15 citations84
US8179713B2May 15, 2012
Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor device
KANZAWA YOSHIHIKO17 citations83
US9142292B2Sep 22, 2015
Method for reading data from nonvolatile storage element, and nonvolatile storage device
KANZAWA YOSHIHIKO2 citations62
US8619460B2Dec 31, 2013
Nonvolatile memory device and method for programming nonvolatile memory element
KANZAWA YOSHIHIKO4 citations62
US8338816B2Dec 25, 2012
Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element
KANZAWA YOSHIHIKO5 citations62
US8445885B2May 21, 2013
Nonvolatile memory element having a thin platinum containing electrode
KANZAWA YOSHIHIKO1 citations52
US8391051B2Mar 5, 2013
Method of programming nonvolatile memory element
KANZAWA YOSHIHIKO0 citations41
SHIMAKAWA KAZUHIKO
3 patentsUS8094485B2Jan 10, 2012
Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect
SHIMAKAWA KAZUHIKO22 citations92
US8472238B2Jun 25, 2013
Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect
SHIMAKAWA KAZUHIKO5 citations84
US8233311B2Jul 31, 2012
Variable resistance nonvolatile storage device having a source line formed of parallel wiring layers connected to each other through vias
SHIMAKAWA KAZUHIKO11 citations84
MITANI SATORU
3 patentsUS8309946B2Nov 13, 2012
Resistance variable element
MITANI SATORU7 citations83
US8264865B2Sep 11, 2012
Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
MITANI SATORU15 citations83
US8553446B2Oct 8, 2013
Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
MITANI SATORU3 citations61