P

Inventor

TAMARU TSUYOSHI

JP56 patents
⚠️ This page may combine multiple inventors who share the name “TAMARU TSUYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

23 patents
US6028360AFeb 22, 2000

Semiconductor integrated circuit device in which a conductive film is formed over a trap film which in turn is formed over a titanium film

HITACHI LTD101 citations99
US6258649B1Jul 10, 2001

Semiconductor integrated circuit device and method of manufacturing the same

HITACHI LTD91 citations98
US6215144B1Apr 10, 2001

Semiconductor integrated circuit device, and method of manufacturing the same

HITACHI LTD73 citations96
US5780882AJul 14, 1998

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD33 citations96
US5498768AMar 12, 1996

Process for forming multilayer wiring

HITACHI LTD60 citations96
US5331191AJul 19, 1994

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD24 citations96
US5202275AApr 13, 1993

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD43 citations96
US6605530B2Aug 12, 2003

Method for fabricating semiconductor integrated circuit

HITACHI LTD14 citations92
US6399438B2Jun 4, 2002

Method of manufacturing semiconductor integrated circuit device having a capacitor

HITACHI LTD32 citations92
US6103566AAug 15, 2000

Method for manufacturing semiconductor integrated circuit device having a titanium electrode

HITACHI LTD22 citations92
US5670421ASep 23, 1997

Process for forming multilayer wiring

HITACHI LTD31 citations92
US6853081B2Feb 8, 2005

Method for fabricating semiconductor integrated circuit

HITACHI LTD11 citations82
US6548847B2Apr 15, 2003

Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal film

HITACHI LTD12 citations82
US6342412B1Jan 29, 2002

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD8 citations82
US6169324B1Jan 2, 2001

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD13 citations82
US6127255AOct 3, 2000

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD8 citations82
US5811316ASep 22, 1998

Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring

HITACHI LTD8 citations82
US5739589AApr 14, 1998

Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same

HITACHI LTD13 citations82
US6638811B2Oct 28, 2003

Method of manufacturing a semiconductor integrated circuit device having a capacitor

HITACHI LTD9 citations74
US6492730B1Dec 10, 2002

Method for fabricating semiconductor integrated circuit

HITACHI LTD4 citations74
US5557147ASep 17, 1996

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD7 citations74
US6686619B2Feb 3, 2004

Dynamic random access memory with improved contact arrangements

HITACHI LTD7 citations73
US7119443B2Oct 10, 2006

Semiconductor integrated circuit device having a conductive film which contains metal atoms bondable to a halogen element

HITACHI LTD2 citations63

RENESAS TECH CORP

11 patents

RENESAS ELECTRONICS CORP

10 patents

TEXAS INSTRUMENTS INC

2 patents

(unassigned)

1 patent

RENESASTECHNOLOGY CORP

1 patent

NOGUCHI JUNJI

1 patent

HITACHI VLSI ENG

1 patent

Showing the top 50 of 56 patents by PatentIndex Score.