Inventor
LIN HUNG-TA
TW39 patents
⚠️ This page may combine multiple inventors who share the name “LIN HUNG-TA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
12 patentsUS8497177B1Jul 30, 2013
Method of making a FinFET device
TAIWAN SEMICONDUCTOR MFG252 citations99
US8822290B2Sep 2, 2014
FinFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG12 citations84
US9379215B2Jun 28, 2016
Fin field effect transistor
TAIWAN SEMICONDUCTOR MFG4 citations83
US9209300B2Dec 8, 2015
Fin field effect transistor
TAIWAN SEMICONDUCTOR MFG8 citations83
US8809940B2Aug 19, 2014
Fin held effect transistor
TAIWAN SEMICONDUCTOR MFG8 citations83
US9029246B2May 12, 2015
Methods of forming epitaxial structures
TAIWAN SEMICONDUCTOR MFG4 citations73
US9184289B2Nov 10, 2015
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG3 citations63
US9397169B2Jul 19, 2016
Epitaxial structures
TAIWAN SEMICONDUCTOR MFG1 citations52
US9356102B2May 31, 2016
Double stepped semiconductor substrate
TAIWAN SEMICONDUCTOR MFG0 citations52
US9224815B2Dec 29, 2015
Method of tuning doping concentration in III-V compound semiconductor through co-doping donor and acceptor impurities
TAIWAN SEMICONDUCTOR MFG0 citations52
US9166035B2Oct 20, 2015
Delta doping layer in MOSFET source/drain region
TAIWAN SEMICONDUCTOR MFG1 citations52
US9099311B2Aug 4, 2015
Double stepped semiconductor substrate
TAIWAN SEMICONDUCTOR MFG0 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS9853102B2Dec 26, 2017
Tunnel field-effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9716091B2Jul 25, 2017
Fin field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US9478631B2Oct 25, 2016
Vertical-gate-all-around devices and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9941394B2Apr 10, 2018
Tunnel field-effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9741800B2Aug 22, 2017
III-V multi-channel FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9735261B2Aug 15, 2017
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9660031B2May 23, 2017
Integrated circuit device having III-V compound semiconductor region comprising magnesium and N-type impurity and overlying III-V compound semiconductor layer formed without Cp2Mg precursor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9412836B2Aug 9, 2016
Contacts for transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
YU CHEN-HUA
7 patentsUS8629465B2Jan 14, 2014
Light-emitting diodes on concave texture substrate
YU CHEN-HUA16 citations93
US8134163B2Mar 13, 2012
Light-emitting diodes on concave texture substrate
YU CHEN-HUA14 citations93
US8058082B2Nov 15, 2011
Light-emitting diode with textured substrate
YU CHEN-HUA28 citations93
US8659033B2Feb 25, 2014
Light-emitting diode with textured substrate
YU CHEN-HUA4 citations73
US8779445B2Jul 15, 2014
Stress-alleviation layer for LED structures
YU CHEN-HUA2 citations63
US8803189B2Aug 12, 2014
III-V compound semiconductor epitaxy using lateral overgrowth
YU CHEN-HUA1 citations52
US8148732B2Apr 3, 2012
Carbon-containing semiconductor substrate
YU CHEN-HUA1 citations52