Inventor

LAVOIE ADRIEN

US151 patents

⚠️ This page may combine multiple inventors who share the name “LAVOIE ADRIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAVOIE ADRIEN

LAM RES CORP

Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors

Inhibitor plasma mediated atomic layer deposition for seamless feature fill

Vacuum-integrated hardmask processes and apparatus

Chamber undercoat preparation method for low temperature ALD films

Methods for depositing silicon oxide

Inhibitor plasma mediated atomic layer deposition for seamless feature fill

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

Vacuum-integrated hardmask processes and apparatus

Plasma assisted atomic layer deposition of multi-layer films for patterning applications

Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications

Sub-saturated atomic layer deposition and conformal film deposition

Sequential precursor dosing in an ALD multi-station/batch reactor

Vacuum-integrated hardmask processes and apparatus

Vacuum-integrated hardmask processes and apparatus

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

High dry etch rate materials for semiconductor patterning applications

Plasma assisted atomic layer deposition metal oxide for patterning applications

Selective atomic layer deposition for gapfill using sacrificial underlayer

Atomic layer etch methods and hardware for patterning applications

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

Showerhead curtain gas method and system for film profile modulation

Plasma assisted atomic layer deposition titanium oxide for patterning applications

Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications

High growth rate process for conformal aluminum nitride

Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer

Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication

Selective atomic layer deposition with post-dose treatment

Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

Multi-station plasma reactor with RF balancing

Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors

Atomic layer clean for removal of photoresist patterning scum

Integrated dry processes for patterning radiation photoresist patterning

Integrated dry processes for patterning radiation photoresist patterning

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

Self-aligned multi-patterning process flow with ALD gapfill spacer mask

Low volume showerhead with porous baffle

NOVELLUS SYSTEMS INC

Methods for depositing films on sensitive substrates

Soft landing nanolaminates for advanced patterning

Methods for depositing films on sensitive substrates

Methods for depositing films on sensitive substrates

Conformal film deposition for gapfill

Plasma activated conformal film deposition

LAVOIE ADRIEN

Plasma activated conformal film deposition

Methods for UV-assisted conformal film deposition

Method of plasma activated deposition of a conformal film on a substrate surface

Plasma activated conformal dielectric film deposition

LI MING

Plasma-activated deposition of conformal films

Plasma-activated deposition of conformal films

SWAMINATHAN SHANKAR

Conformal doping via plasma activated atomic layer deposition and conformal film deposition

INTEL CORP

Organometallic precursors for the chemical phase deposition of metal films in interconnect applications