Inventor

KO SEUNG-PIL

KR22 patents

⚠️ This page may combine multiple inventors who share the name “KO SEUNG-PIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KO SEUNG-PIL

SAMSUNG ELECTRONICS CO LTD

Methods of fabricating a semiconductor device including a self-aligned cell diode

Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices

Multiple level cell phase-change memory devices having controlled resistance drift parameter, memory systems employing such devices and methods of reading memory devices

Phase change memory device

Phase change memory devices and methods of forming the same

Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices

Insulation layer arrangement for magnetic tunnel junction device

Semiconductor data storage devices and methods of fabricating the same

Semiconductor devices

Semiconductor device and method of fabricating the same

Semiconductor devices

Insulation layer arrangement for magnetic tunnel junction device

Data storage devices and methods of manufacturing the same

Semiconductor device including a diode and method of manufacturing the same

Semiconductor device with buried word line structures

Semiconductor device having improved device bonding features, performance and reliability

Method of fabricating semiconductor device

Magnetic memory device with a plurality of capping layers

KO SEUNG-PIL

Magnetoresistive random access memory devices and methods of manufacturing the same

Method of forming a contact and method of manufacturing a phase change memory device using the same

KO SEUNG PIL

Semiconductor devices and methods of fabricating the same

CHANG-WOOK JEONG

Multiple level cell phase-change memory devices having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices