Inventor
SATO MASASHIGE
JP38 patents
⚠️ This page may combine multiple inventors who share the name “SATO MASASHIGE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
14 patentsUS6124711ASep 26, 2000
Magnetic sensor using tunnel resistance to detect an external magnetic field
FUJITSU LTD188 citations99
US5986858ANov 16, 1999
Ferromagnetic tunnel-junction magnetic sensor utilizing a barrier layer having a metal layer carrying an oxide film
FUJITSU LTD131 citations99
US6903400B2Jun 7, 2005
Magnetoresistive memory apparatus
FUJITSU LTD44 citations93
US6165287ADec 26, 2000
Ferromagnetic tunnel-junction magnetic sensor
FUJITSU LTD18 citations93
US6110751AAug 29, 2000
Tunnel junction structure and its manufacture and magnetic sensor
FUJITSU LTD42 citations93
US7382643B2Jun 3, 2008
Magnetoresistive effect element and magnetic memory device
FUJITSU LTD41 citations92
US7199985B1Apr 3, 2007
Magnetic sensor, magnetic head, magnetic encoder and hard disk device
FUJITSU LTD14 citations84
US7466526B2Dec 16, 2008
Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device
FUJITSU LTD17 citations83
US6741434B1May 25, 2004
Magnetic sensor and production method thereof, ferromagnetic tunnel junction element, and magnetic head
FUJITSU LTD11 citations74
US6404672B2Jun 11, 2002
Magnetic element and magnetic memory device
FUJITSU LTD7 citations74
US7050268B2May 23, 2006
Disk drive with read IC chip and write IC chip mounted respectively on suspension and arm
FUJITSU LTD4 citations63
US5985471ANov 16, 1999
Magnetic sensor
FUJITSU LTD5 citations63
US7535755B2May 19, 2009
Magnetic memory device and method for fabricating the same
FUJITSU LTD5 citations62
US7221547B2May 22, 2007
Magnetoresistive effect element, a magnetic head, and a magnetic reproducing apparatus therewith
FUJITSU LTD1 citations52
HGST Netherlands BV
12 patentsUS9064508B1Jun 23, 2015
Pile spin-torque oscillator with AF-mode oscillation for generating high AC-field in microwave-assisted magnetic recording
HGST Netherlands BV58 citations96
US9311934B1Apr 12, 2016
Symmetrical STO for oscillation with both polarity bias
HGST Netherlands BV33 citations94
US9230569B1Jan 5, 2016
Low Bs spin-polarizer for spin torque oscillator
HGST Netherlands BV30 citations93
US9805746B1Oct 31, 2017
Low magnetic flux density interface layer for spin torque oscillator
HGST Netherlands BV19 citations92
US9099107B1Aug 4, 2015
Stabilizing layer for a spin torque oscillator (STO)
HGST Netherlands BV22 citations92
US9728210B2Aug 8, 2017
Texture-control layer for spin torque oscillator
HGST Netherlands BV13 citations84
US9378759B2Jun 28, 2016
Spin torque oscillator with low magnetic moment and high perpendicular magnetic anisotropy material
HGST Netherlands BV17 citations84
US9305574B1Apr 5, 2016
Negative-polarization spin-torque-oscillator
HGST Netherlands BV10 citations84
US9858952B1Jan 2, 2018
Microwave assisted magnetic recording head having spin torque oscillator frequency detection
HGST Netherlands BV2 citations73
US9437222B1Sep 6, 2016
Spin torque oscillator with high spin torque efficiency and reliability
HGST Netherlands BV4 citations71
US8976493B1Mar 10, 2015
Magnetic read sensor with novel pinned layer and side shield design for improved data track resolution and magnetic pinning robustness
HGST Netherlands BV4 citations70
US9336797B2May 10, 2016
Extended spin torque oscillator
HGST Netherlands BV2 citations63
DENSO CORP
4 patentsIBUSUKI TAKAHIRO
3 patentsUS8194362B2Jun 5, 2012
Magnetoresistive effect device including a nitride underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer which are multilayered in this order on a substrate, magnetic head including the same magnetoresistive effect device, and information storage apparatus including the same magnetic head
IBUSUKI TAKAHIRO5 citations60
US8081404B2Dec 20, 2011
Magnetoresistive element including an amorphous reference layer, a crystal layer, and a pinned layer
IBUSUKI TAKAHIRO5 citations60
US8184407B2May 22, 2012
Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural body
IBUSUKI TAKAHIRO1 citations49