Inventor

NARAYANAN PURNIMA

US19 patents

⚠️ This page may combine multiple inventors who share the name “NARAYANAN PURNIMA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NARAYANAN PURNIMA

MICRON TECHNOLOGY INC

Methods and apparatuses having memory cells including a monolithic semiconductor channel

Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies

Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies

Integrated assemblies having one or more modifying substances distributed within semiconductor material, and methods of forming integrated assemblies

Methods and apparatuses having memory cells including a monolithic semiconductor channel

Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies

Integrated circuitry, a method used in forming integrated circuitry, and a method used in forming a memory array comprising strings of memory cells

Integrated circuitry, a method used in forming integrated circuitry, and a method used in forming a memory array comprising strings of memory cells

Integrated assemblies which include stacked memory decks

Methods of forming integrated assemblies include stacked memory decks

Methods and apparatuses having memory cells including a monolithic semiconductor channel

Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

LODESTAR LICENSING GROUP LLC

Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies

Integrated assemblies having one or more modifying substances distributed within semiconductor material, and methods of forming integrated assemblies

Integrated assemblies which include stacked memory decks, and methods of forming integrated assemblies

Integrated assemblies which include stacked memory decks, and methods of forming integrated assemblies

INTEL CORP

Memory devices and systems having reduced bit line to drain select gate shorting and associated methods

Memory devices and systems having reduced bit line to drain select gate shorting and associated methods

3D NAND with integral drain-end select gate (SGD)