Inventor
MANGER DIRK
DE29 patents
⚠️ This page may combine multiple inventors who share the name “MANGER DIRK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
17 patentsUS7109544B2Sep 19, 2006
Architecture for vertical transistor cells and transistor-controlled memory cells
INFINEON TECHNOLOGIES AG121 citations98
US7368752B2May 6, 2008
DRAM memory cell
INFINEON TECHNOLOGIES AG27 citations92
US7005240B2Feb 28, 2006
Method for forming a hard mask in a layer on a planar device
INFINEON TECHNOLOGIES AG52 citations92
US7074660B2Jul 11, 2006
FinFet device and method of fabrication
INFINEON TECHNOLOGIES AG14 citations84
US6932916B2Aug 23, 2005
Semiconductor substrate with trenches of varying depth
INFINEON TECHNOLOGIES AG13 citations84
US6919255B2Jul 19, 2005
Semiconductor trench structure
INFINEON TECHNOLOGIES AG16 citations84
US7662721B2Feb 16, 2010
Hard mask layer stack and a method of patterning
INFINEON TECHNOLOGIES AG17 citations79
US9812369B2Nov 7, 2017
BiMOS device with a fully self-aligned emitter-silicon and method for manufacturing the same
INFINEON TECHNOLOGIES AG2 citations71
US7141845B2Nov 28, 2006
DRAM cell array and memory cell arrangement having vertical memory cells and methods for fabricating the same
INFINEON TECHNOLOGIES AG6 citations63
US7005346B2Feb 28, 2006
Method for producing a memory cell of a memory cell field in a semiconductor memory
INFINEON TECHNOLOGIES AG3 citations63
US6861688B2Mar 1, 2005
Line configuration for bit lines for contact-connecting at least one memory cell, semiconductor component with a line configuration and method for fabricating a line configuration
INFINEON TECHNOLOGIES AG3 citations63
US6750098B2Jun 15, 2004
Integrated semiconductor memory and fabrication method
INFINEON TECHNOLOGIES AG6 citations63
US7473952B2Jan 6, 2009
Memory cell array and method of manufacturing the same
INFINEON TECHNOLOGIES AG3 citations61
US6956260B2Oct 18, 2005
Integrated semiconductor memory with wordlines conductively connected to one another in pairs
INFINEON TECHNOLOGIES AG4 citations61
US6900130B2May 31, 2005
Method for locally heating a region in a semiconductor substrate
INFINEON TECHNOLOGIES AG0 citations52
US10312159B2Jun 4, 2019
BiMOS device with a fully self-aligned emitter-silicon and method for manufacturing the same
INFINEON TECHNOLOGIES AG0 citations50
US7339224B2Mar 4, 2008
Trench capacitor and corresponding method of production
INFINEON TECHNOLOGIES AG0 citations42
QIMONDA AG
7 patentsUS7915667B2Mar 29, 2011
Integrated circuits having a contact region and methods for manufacturing the same
QIMONDA AG491 citations97
US7649779B2Jan 19, 2010
Integrated circuits; methods for manufacturing an integrated circuit; memory modules; computing systems
QIMONDA AG16 citations78
US7678679B2Mar 16, 2010
Vertical device with sidewall spacer, methods of forming sidewall spacers and field effect transistors, and patterning method
QIMONDA AG7 citations70
US7829892B2Nov 9, 2010
Integrated circuit including a gate electrode
QIMONDA AG2 citations63
US7825031B2Nov 2, 2010
Method of fabricating a semiconductor device
QIMONDA AG2 citations63
US7737049B2Jun 15, 2010
Method for forming a structure on a substrate and device
QIMONDA AG2 citations63
US7863149B2Jan 4, 2011
Method for fabricating a capacitor
QIMONDA AG3 citations61
INFINEON TECHNOLOGIES AUSTRIA AG
3 patentsUS12557360B2Feb 17, 2026
Lateral high voltage semiconductor device and method for forming a lateral high voltage semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations53
US10608103B2Mar 31, 2020
Method for forming vertical field effect transistor devices having alternating drift regions and compensation regions
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US10164086B2Dec 25, 2018
Vertical field effect transistor device having alternating drift regions and compensation regions
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52