Inventor
LIN CHENG-MING
TW73 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHENG-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
38 patentsUS11018232B2May 25, 2021
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11209736B2Dec 28, 2021
Method for cleaning substrate, method for manufacturing photomask and method for cleaning photomask
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US12107134B2Oct 1, 2024
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11594633B2Feb 28, 2023
Selective internal gate structure for ferroelectric semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11018256B2May 25, 2021
Selective internal gate structure for ferroelectric semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10665685B2May 26, 2020
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11796909B2Oct 24, 2023
Structure and method of reticle pod having inspection window
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11402743B2Aug 2, 2022
Mask defect prevention
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11314164B2Apr 26, 2022
Structure and method of reticle pod having inspection window
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10508953B2Dec 17, 2019
Method and system for processing substrate by chemical solution in semiconductor manufacturing fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US12414318B2Sep 9, 2025
Fabrication of field effect transistors with ferroelectric materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12336235B2Jun 17, 2025
Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12278287B2Apr 15, 2025
Selective internal gate structure for ferroelectric semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12034058B2Jul 9, 2024
Gate stack treatment for ferroelectric transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11901450B2Feb 13, 2024
Ferroelectric structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11621338B2Apr 4, 2023
Gate stack treatment for ferroelectric transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11195938B2Dec 7, 2021
Device performance by fluorine treatment
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11139397B2Oct 5, 2021
Self-aligned metal compound layers for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11069807B2Jul 20, 2021
Ferroelectric structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11031490B2Jun 8, 2021
Fabrication of field effect transistors with ferroelectric materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10978567B2Apr 13, 2021
Gate stack treatment for ferroelectric transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12283616B2Apr 22, 2025
FinFET having a work function material gradient
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218225B1Feb 4, 2025
Radical treatment in supercritical fluid for gate dielectric quality improvement to CFET structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12136660B2Nov 5, 2024
Semiconductor device, and method for protecting low-k dielectric feature of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12055850B2Aug 6, 2024
Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855164B2Dec 26, 2023
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11662660B2May 30, 2023
Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11282940B2Mar 22, 2022
Field effect transistors with ferroelectric dielectric materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11282933B2Mar 22, 2022
FinFET having a work function material gradient
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11079671B2Aug 3, 2021
Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12520562B2Jan 6, 2026
Semiconductor device with germanium-based channel
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12315863B2May 27, 2025
Contact structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12248245B2Mar 11, 2025
Structure and method of reticle pod having inspection window
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12136570B2Nov 5, 2024
Graphene layer for low resistance contacts and damascene interconnects
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12282260B2Apr 22, 2025
Method for cleaning substrate, method for manufacturing photomask and method for cleaning photomask
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12124163B2Oct 22, 2024
Mask defect prevention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12087579B2Sep 10, 2024
Method for forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11860530B2Jan 2, 2024
Mask defect prevention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
TAIWAN SEMICONDUCTOR MFG
7 patentsUS7917244B2Mar 29, 2011
Method and system for reducing critical dimension side-to-side tilting error
TAIWAN SEMICONDUCTOR MFG3 citations63
US7157191B2Jan 2, 2007
Single trench repair method with etched quartz for attenuated phase shifting mask
TAIWAN SEMICONDUCTOR MFG2 citations63
US7029802B2Apr 18, 2006
Embedded bi-layer structure for attenuated phase shifting mask
TAIWAN SEMICONDUCTOR MFG2 citations63
US7008730B2Mar 7, 2006
Application of high transmittance attenuating phase shifting mask with dark tone for sub-0.1 micrometer logic device contact hole pattern in 193 NM lithography
TAIWAN SEMICONDUCTOR MFG5 citations63
US6982134B2Jan 3, 2006
Multiple stepped aperture repair of transparent photomask substrates
TAIWAN SEMICONDUCTOR MFG5 citations63
US6905802B2Jun 14, 2005
Multiple exposure method for forming a patterned photoresist layer
TAIWAN SEMICONDUCTOR MFG3 citations63
US6872496B2Mar 29, 2005
AlSixOy as a new bi-layer high transmittance attenuating phase shifting mask material for 193 nanometer lithography
TAIWAN SEMICONDUCTOR MFG4 citations63
AIDMICS BIOTECHNOLOGY CO LTD
3 patentsUS10495863B2Dec 3, 2019
Portable microscope device
AIDMICS BIOTECHNOLOGY CO LTD7 citations81
US10495868B2Dec 3, 2019
Sample carrying module and portable microscope using the same
AIDMICS BIOTECHNOLOGY CO LTD3 citations70
US10288869B2May 14, 2019
Reflecting microscope module and reflecting microscope device
AIDMICS BIOTECHNOLOGY CO LTD2 citations70
LIN CHENG-MING
1 patentHEWLETT PACKARD DEVELOPMENT CO
1 patentShowing the top 50 of 73 patents by PatentIndex Score.