P

Inventor

LIN CHENG-MING

TW73 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHENG-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

38 patents
US11018232B2May 25, 2021

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11209736B2Dec 28, 2021

Method for cleaning substrate, method for manufacturing photomask and method for cleaning photomask

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US12107134B2Oct 1, 2024

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11594633B2Feb 28, 2023

Selective internal gate structure for ferroelectric semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11018256B2May 25, 2021

Selective internal gate structure for ferroelectric semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10665685B2May 26, 2020

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11796909B2Oct 24, 2023

Structure and method of reticle pod having inspection window

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11402743B2Aug 2, 2022

Mask defect prevention

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11314164B2Apr 26, 2022

Structure and method of reticle pod having inspection window

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10508953B2Dec 17, 2019

Method and system for processing substrate by chemical solution in semiconductor manufacturing fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US12414318B2Sep 9, 2025

Fabrication of field effect transistors with ferroelectric materials

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12336235B2Jun 17, 2025

Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12278287B2Apr 15, 2025

Selective internal gate structure for ferroelectric semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12034058B2Jul 9, 2024

Gate stack treatment for ferroelectric transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11901450B2Feb 13, 2024

Ferroelectric structure for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11621338B2Apr 4, 2023

Gate stack treatment for ferroelectric transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11195938B2Dec 7, 2021

Device performance by fluorine treatment

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11139397B2Oct 5, 2021

Self-aligned metal compound layers for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11069807B2Jul 20, 2021

Ferroelectric structure for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11031490B2Jun 8, 2021

Fabrication of field effect transistors with ferroelectric materials

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10978567B2Apr 13, 2021

Gate stack treatment for ferroelectric transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12283616B2Apr 22, 2025

FinFET having a work function material gradient

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218225B1Feb 4, 2025

Radical treatment in supercritical fluid for gate dielectric quality improvement to CFET structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12136660B2Nov 5, 2024

Semiconductor device, and method for protecting low-k dielectric feature of semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12055850B2Aug 6, 2024

Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855164B2Dec 26, 2023

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11662660B2May 30, 2023

Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11282940B2Mar 22, 2022

Field effect transistors with ferroelectric dielectric materials

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11282933B2Mar 22, 2022

FinFET having a work function material gradient

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11079671B2Aug 3, 2021

Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12520562B2Jan 6, 2026

Semiconductor device with germanium-based channel

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12315863B2May 27, 2025

Contact structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12248245B2Mar 11, 2025

Structure and method of reticle pod having inspection window

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12136570B2Nov 5, 2024

Graphene layer for low resistance contacts and damascene interconnects

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12282260B2Apr 22, 2025

Method for cleaning substrate, method for manufacturing photomask and method for cleaning photomask

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12124163B2Oct 22, 2024

Mask defect prevention

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12087579B2Sep 10, 2024

Method for forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11860530B2Jan 2, 2024

Mask defect prevention

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60

TAIWAN SEMICONDUCTOR MFG

7 patents

AIDMICS BIOTECHNOLOGY CO LTD

3 patents

LIN CHENG-MING

1 patent

HEWLETT PACKARD DEVELOPMENT CO

1 patent

Showing the top 50 of 73 patents by PatentIndex Score.