Inventor
CHEUNG ROBIN
US55 patents
⚠️ This page may combine multiple inventors who share the name “CHEUNG ROBIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
23 patentsUS6258223B1Jul 10, 2001
In-situ electroless copper seed layer enhancement in an electroplating system
APPLIED MATERIALS INC399 citations99
US6436267B1Aug 20, 2002
Method for achieving copper fill of high aspect ratio interconnect features
APPLIED MATERIALS INC105 citations98
US6258220B1Jul 10, 2001
Electro-chemical deposition system
APPLIED MATERIALS INC443 citations98
US6136163AOct 24, 2000
Apparatus for electro-chemical deposition with thermal anneal chamber
APPLIED MATERIALS INC569 citations98
US6645550B1Nov 11, 2003
Method of treating a substrate
APPLIED MATERIALS INC249 citations97
US6740221B2May 25, 2004
Method of forming copper interconnects
APPLIED MATERIALS INC56 citations96
US6357143B2Mar 19, 2002
Method and apparatus for heating and cooling substrates
APPLIED MATERIALS INC40 citations96
US6276072B1Aug 21, 2001
Method and apparatus for heating and cooling substrates
APPLIED MATERIALS INC58 citations96
US6635157B2Oct 21, 2003
Electro-chemical deposition system
APPLIED MATERIALS INC43 citations95
US6818066B2Nov 16, 2004
Method and apparatus for treating a substrate
APPLIED MATERIALS INC25 citations93
US6929774B2Aug 16, 2005
Method and apparatus for heating and cooling substrates
APPLIED MATERIALS INC19 citations92
US6658763B2Dec 9, 2003
Method for heating and cooling substrates
APPLIED MATERIALS INC27 citations92
US6477787B2Nov 12, 2002
Method and apparatus for heating and cooling substrates
APPLIED MATERIALS INC22 citations92
US6842659B2Jan 11, 2005
Method and apparatus for providing intra-tool monitoring and control
APPLIED MATERIALS INC18 citations91
US6824666B2Nov 30, 2004
Electroless deposition method over sub-micron apertures
APPLIED MATERIALS INC42 citations91
US7497932B2Mar 3, 2009
Electro-chemical deposition system
APPLIED MATERIALS INC9 citations82
US7192494B2Mar 20, 2007
Method and apparatus for annealing copper films
APPLIED MATERIALS INC12 citations81
US6753248B1Jun 22, 2004
Post metal barrier/adhesion film
APPLIED MATERIALS INC7 citations74
US6572010B2Jun 3, 2003
Integrated solder bump deposition apparatus and method
APPLIED MATERIALS INC11 citations74
US6797620B2Sep 28, 2004
Method and apparatus for improved electroplating fill of an aperture
APPLIED MATERIALS INC12 citations73
US7074626B2Jul 11, 2006
Method and apparatus for providing intra-tool monitoring and control
APPLIED MATERIALS INC8 citations72
US7393795B2Jul 1, 2008
Methods for post-etch deposition of a dielectric film
APPLIED MATERIALS INC5 citations63
US6893548B2May 17, 2005
Method of conditioning electrochemical baths in plating technology
APPLIED MATERIALS INC5 citations63
ADVANCED MICRO DEVICES INC
19 patentsUS6245670B1Jun 12, 2001
Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure
ADVANCED MICRO DEVICES INC287 citations99
US5968333AOct 19, 1999
Method of electroplating a copper or copper alloy interconnect
ADVANCED MICRO DEVICES INC153 citations99
US5635423AJun 3, 1997
Simplified dual damascene process for multi-level metallization and interconnection structure
ADVANCED MICRO DEVICES INC374 citations99
US5837618ANov 17, 1998
Uniform nonconformal deposition for forming low dielectric constant insulation between certain conductive lines
ADVANCED MICRO DEVICES INC53 citations95
US5776834AJul 7, 1998
Bias plasma deposition for selective low dielectric insulation
ADVANCED MICRO DEVICES INC45 citations95
US6400030B1Jun 4, 2002
Self-aligning vias for semiconductors
ADVANCED MICRO DEVICES INC21 citations93
US6083842AJul 4, 2000
Fabrication of a via plug having high aspect ratio with a diffusion barrier layer effectively surrounding the via plug
ADVANCED MICRO DEVICES INC38 citations93
US6033982AMar 7, 2000
Scaled interconnect anodization for high frequency applications
ADVANCED MICRO DEVICES INC23 citations93
US5990557ANov 23, 1999
Bias plasma deposition for selective low dielectric insulation
ADVANCED MICRO DEVICES INC18 citations92
US5955786ASep 21, 1999
Semiconductor device using uniform nonconformal deposition for forming low dielectric constant insulation between certain conductive lines
ADVANCED MICRO DEVICES INC20 citations92
US5770519AJun 23, 1998
Copper reservoir for reducing electromigration effects associated with a conductive via in a semiconductor device
ADVANCED MICRO DEVICES INC49 citations92
US5691573ANov 25, 1997
Composite insulation with a dielectric constant of less than 3 in a narrow space separating conductive lines
ADVANCED MICRO DEVICES INC44 citations92
US5639691AJun 17, 1997
Copper pellet for reducing electromigration effects associated with a conductive via in a semiconductor device
ADVANCED MICRO DEVICES INC19 citations92
US6319616B1Nov 20, 2001
Scaled interconnect anodization for high frequency applications
ADVANCED MICRO DEVICES INC5 citations74
US6200913B1Mar 13, 2001
Cure process for manufacture of low dielectric constant interlevel dielectric layers
ADVANCED MICRO DEVICES INC9 citations74
US6124201ASep 26, 2000
Method for manufacturing semiconductors with self-aligning vias
ADVANCED MICRO DEVICES INC12 citations74
US6048802AApr 11, 2000
Selective nonconformal deposition for forming low dielectric insulation between certain conductive lines
ADVANCED MICRO DEVICES INC15 citations73
US5646448AJul 8, 1997
Copper pellet for reducing electromigration effects associated with a conductive via in a semiconductor device
ADVANCED MICRO DEVICES INC7 citations73
US5675186AOct 7, 1997
Construction that prevents the undercut of interconnect lines in plasma metal etch systems
ADVANCED MICRO DEVICES INC13 citations71
UNITY SEMICONDUCTOR CORP
4 patentsUS7742323B2Jun 22, 2010
Continuous plane of thin-film materials for a two-terminal cross-point memory
UNITY SEMICONDUCTOR CORP56 citations97
US8003511B2Aug 23, 2011
Memory cell formation using ion implant isolated conductive metal oxide
UNITY SEMICONDUCTOR CORP26 citations92
US7897951B2Mar 1, 2011
Continuous plane of thin-film materials for a two-terminal cross-point memory
UNITY SEMICONDUCTOR CORP27 citations92
US7888711B2Feb 15, 2011
Continuous plane of thin-film materials for a two-terminal cross-point memory
UNITY SEMICONDUCTOR CORP41 citations92
CHEUNG ROBIN
2 patentsRINERSON DARRELL
2 patentsShowing the top 50 of 55 patents by PatentIndex Score.