Inventor
LEE CHO-EUN
KR23 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHO-EUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS10297601B2May 21, 2019
Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD19 citations94
US9761719B2Sep 12, 2017
Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations
SAMSUNG ELECTRONICS CO LTD19 citations92
US11145720B2Oct 12, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations84
US10672764B2Jun 2, 2020
Integrated circuit semiconductor devices including a metal oxide semiconductor (MOS) transistor
SAMSUNG ELECTRONICS CO LTD8 citations83
US10084049B2Sep 25, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9735158B2Aug 15, 2017
Semiconductor devices having bridge layer and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11728434B2Aug 15, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10784379B2Sep 22, 2020
Semiconductor device including a shared semiconductor pattern having faceted sidewalls and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10008600B2Jun 26, 2018
Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations
SAMSUNG ELECTRONICS CO LTD3 citations72
US12581634B2Mar 17, 2026
Semiconductor devices incorporating semiconductor layer configurations and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11735631B2Aug 22, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11469237B2Oct 11, 2022
Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12027586B2Jul 2, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US10147723B2Dec 4, 2018
Semiconductor devices having bridge layer and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9755076B2Sep 5, 2017
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US9553192B2Jan 24, 2017
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US10504992B2Dec 10, 2019
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10128112B2Nov 13, 2018
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12501672B2Dec 16, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations48
US12245440B2Mar 4, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations48
KIM SEOK-HOON
2 patentsUS9397219B2Jul 19, 2016
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
KIM SEOK-HOON8 citations83
US9368495B2Jun 14, 2016
Semiconductor devices having bridge layer and methods of manufacturing the same
KIM SEOK-HOON6 citations83