Inventor
CHO EDWARD NAMKYU
KR14 patents
Patents
14 patentsUS9972701B2May 15, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD18 citations85
US11145720B2Oct 12, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations84
US10672764B2Jun 2, 2020
Integrated circuit semiconductor devices including a metal oxide semiconductor (MOS) transistor
SAMSUNG ELECTRONICS CO LTD8 citations83
US10319841B2Jun 11, 2019
Integrated circuit device including asymmetrical fin field-effect transistor
SAMSUNG ELECTRONICS CO LTD7 citations83
US11862679B2Jan 2, 2024
Semiconductor device having increased contact area between a source/drain pattern and an active contact
SAMSUNG ELECTRONICS CO LTD2 citations72
US11302779B2Apr 12, 2022
Semiconductor device having increased contact area between a source/drain pattern and an active contact
SAMSUNG ELECTRONICS CO LTD5 citations72
US11217667B2Jan 4, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US11735631B2Aug 22, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12471365B1Nov 11, 2025
Semiconductor device including bottom isolation structure for preventing current leakage
SAMSUNG ELECTRONICS CO LTD0 citations60
US11735632B2Aug 22, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US10573729B2Feb 25, 2020
Integrated circuit device including asymmetrical fin field-effect transistor
SAMSUNG ELECTRONICS CO LTD0 citations51
US12453148B2Oct 21, 2025
Integrated circuit device including field-effect transistor with controlled sizes and configurations
SAMSUNG ELECTRONICS CO LTD0 citations49
US12382716B2Aug 5, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations49
US12336283B1Jun 17, 2025
Three-dimensional stacked semiconductor device including simplified source/drain contact area
SAMSUNG ELECTRONICS CO LTD0 citations49