Inventor
TSUTSUMI TOSHIAKI
JP21 patents
⚠️ This page may combine multiple inventors who share the name “TSUTSUMI TOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
6 patentsUS6124622ASep 26, 2000
MIS transistor with a three-layer device isolation film surrounding the MIS transistor
MITSUBISHI ELECTRIC CORP21 citations92
US5844274ADec 1, 1998
Semiconductor device including an element isolating film having a flat upper surface
MITSUBISHI ELECTRIC CORP30 citations92
US5789792AAug 4, 1998
Isolation trench structures protruding above a substrate surface
MITSUBISHI ELECTRIC CORP28 citations92
US6657265B2Dec 2, 2003
Semiconductor device and its manufacturing method
MITSUBISHI ELECTRIC CORP13 citations84
US6281051B1Aug 28, 2001
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP6 citations73
US6087727AJul 11, 2000
Misfet semiconductor device having different vertical levels
MITSUBISHI ELECTRIC CORP7 citations73
RENESAS TECH CORP
6 patentsUS7696050B2Apr 13, 2010
Method of manufacturing semiconductor device carrying out ion implantation before silicide process
RENESAS TECH CORP3 citations63
US7321152B2Jan 22, 2008
Thin-film transistor and method of fabricating the same
RENESAS TECH CORP1 citations62
US7112854B1Sep 26, 2006
Thin-film transistor and method of fabricating the same
RENESAS TECH CORP2 citations62
US7180153B2Feb 20, 2007
Capture of residual refractory metal within semiconductor device
RENESAS TECH CORP4 citations60
US7187040B2Mar 6, 2007
Thin-film transistor and method of fabricating the same
RENESAS TECH CORP0 citations52
US7408239B2Aug 5, 2008
Capture of residual refractory metal within semiconductor device
RENESAS TECH CORP0 citations50
RENESAS ELECTRONICS CORP
4 patentsUS7936016B2May 3, 2011
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP6 citations74
US8022445B2Sep 20, 2011
Method of manufacturing a semiconductor device
RENESAS ELECTRONICS CORP1 citations52
US7872314B2Jan 18, 2011
Method of manufacturing semiconductor device carrying out ion implantation before silicide process
RENESAS ELECTRONICS CORP0 citations52
US9503018B2Nov 22, 2016
Semiconductor device
RENESAS ELECTRONICS CORP0 citations51