Inventor

BOJARCZUK JR NESTOR A

US21 patents

⚠️ This page may combine multiple inventors who share the name “BOJARCZUK JR NESTOR A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BOJARCZUK JR NESTOR A

IBM

Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics

Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique

Hybrid organic-inorganic semiconductor light emitting diodes

Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics

Method for forming dielectric stack without interfacial layer

Hybrid organic-inorganic semiconductor light emitting diodes

Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics

Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics

Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS

Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide

Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same

Monolithic silicon-based nitride display device

Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectrics

Rare earth metal oxide memory element based on charge storage and method for manufacturing same

Dielectric stack without interfacial layer

Selective growth of ferromagnetic films for magnetic memory, storage-based devices

Composite magneto-optic memory and media

Rare earth metal oxide memory element based on charge storage and method for manufacturing same

Selective growth of ferromagnetic films

Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same

BOJARCZUK JR NESTOR A

Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics