P

Inventor

RIEGER WALTER

71 patents
⚠️ This page may combine multiple inventors who share the name “RIEGER WALTER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AUSTRIA

13 patents
US8022474B2Sep 20, 2011

Semiconductor device

INFINEON TECHNOLOGIES AUSTRIA34 citations96
US7893486B2Feb 22, 2011

Field plate trench transistor and method for producing it

INFINEON TECHNOLOGIES AUSTRIA12 citations93
US9373700B2Jun 21, 2016

Field plate trench transistor and method for producing it

INFINEON TECHNOLOGIES AUSTRIA9 citations84
US9202909B2Dec 1, 2015

Power MOSFET semiconductor

INFINEON TECHNOLOGIES AUSTRIA4 citations84
US7875951B2Jan 25, 2011

Semiconductor with active component and method for manufacture

INFINEON TECHNOLOGIES AUSTRIA13 citations84
US7851349B2Dec 14, 2010

Method for producing a connection electrode for two semiconductor zones arranged one above another

INFINEON TECHNOLOGIES AUSTRIA15 citations84
US7541260B2Jun 2, 2009

Trench diffusion isolation in semiconductor devices

INFINEON TECHNOLOGIES AUSTRIA9 citations84
US7465987B2Dec 16, 2008

Field electrode trench transistor structure with voltage divider

INFINEON TECHNOLOGIES AUSTRIA16 citations84
US7943955B2May 17, 2011

Monolithic semiconductor switches and method for manufacturing

INFINEON TECHNOLOGIES AUSTRIA13 citations83
US9171841B2Oct 27, 2015

Field plate trench transistor and method for producing it

INFINEON TECHNOLOGIES AUSTRIA1 citations63
US8884335B2Nov 11, 2014

Semiconductor including lateral HEMT

INFINEON TECHNOLOGIES AUSTRIA3 citations63
US8759905B2Jun 24, 2014

Field plate trench transistor and method for producing it

INFINEON TECHNOLOGIES AUSTRIA2 citations63
US7999287B2Aug 16, 2011

Lateral HEMT and method for the production of a lateral HEMT

INFINEON TECHNOLOGIES AUSTRIA3 citations63

INFINEON TECHNOLOGIES AG

11 patents
US6998678B2Feb 14, 2006

Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode

INFINEON TECHNOLOGIES AG69 citations98
US6806533B2Oct 19, 2004

Semiconductor component with an increased breakdown voltage in the edge area

INFINEON TECHNOLOGIES AG83 citations98
US6690062B2Feb 10, 2004

Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance

INFINEON TECHNOLOGIES AG119 citations98
US7005351B2Feb 28, 2006

Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration

INFINEON TECHNOLOGIES AG113 citations97
US7091573B2Aug 15, 2006

Power transistor

INFINEON TECHNOLOGIES AG62 citations96
US7250343B2Jul 31, 2007

Power transistor arrangement and method for fabricating it

INFINEON TECHNOLOGIES AG37 citations92
US7186618B2Mar 6, 2007

Power transistor arrangement and method for fabricating it

INFINEON TECHNOLOGIES AG32 citations92
US6891223B2May 10, 2005

Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell

INFINEON TECHNOLOGIES AG52 citations92
US7307010B2Dec 11, 2007

Method for processing a thin semiconductor substrate

INFINEON TECHNOLOGIES AG12 citations84
US6858895B2Feb 22, 2005

Circuit configuration having a field-effect transistor operable at higher frequencies

INFINEON TECHNOLOGIES AG19 citations80
US6927101B2Aug 9, 2005

Field-effect-controllable semiconductor component and method for fabricating the component

INFINEON TECHNOLOGIES AG8 citations74

INFINEON TECHNOLOGIES AUSTRIA AG

8 patents

SCHULER GMBH L

6 patents

HIRLER FRANZ

4 patents

HAEBERLEN OLIVER

2 patents

LEITL WERKE BAUHUETTE

2 patents

SCHULER PRESSEN GMBH & CO

2 patents

RIEGER WALTER

1 patent

KERNFORSCHUNGSZ KARLSRUHE

1 patent

Showing the top 50 of 71 patents by PatentIndex Score.