Inventor
RIEGER WALTER
71 patents
⚠️ This page may combine multiple inventors who share the name “RIEGER WALTER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA
13 patentsUS8022474B2Sep 20, 2011
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA34 citations96
US7893486B2Feb 22, 2011
Field plate trench transistor and method for producing it
INFINEON TECHNOLOGIES AUSTRIA12 citations93
US9373700B2Jun 21, 2016
Field plate trench transistor and method for producing it
INFINEON TECHNOLOGIES AUSTRIA9 citations84
US9202909B2Dec 1, 2015
Power MOSFET semiconductor
INFINEON TECHNOLOGIES AUSTRIA4 citations84
US7875951B2Jan 25, 2011
Semiconductor with active component and method for manufacture
INFINEON TECHNOLOGIES AUSTRIA13 citations84
US7851349B2Dec 14, 2010
Method for producing a connection electrode for two semiconductor zones arranged one above another
INFINEON TECHNOLOGIES AUSTRIA15 citations84
US7541260B2Jun 2, 2009
Trench diffusion isolation in semiconductor devices
INFINEON TECHNOLOGIES AUSTRIA9 citations84
US7465987B2Dec 16, 2008
Field electrode trench transistor structure with voltage divider
INFINEON TECHNOLOGIES AUSTRIA16 citations84
US7943955B2May 17, 2011
Monolithic semiconductor switches and method for manufacturing
INFINEON TECHNOLOGIES AUSTRIA13 citations83
US9171841B2Oct 27, 2015
Field plate trench transistor and method for producing it
INFINEON TECHNOLOGIES AUSTRIA1 citations63
US8884335B2Nov 11, 2014
Semiconductor including lateral HEMT
INFINEON TECHNOLOGIES AUSTRIA3 citations63
US8759905B2Jun 24, 2014
Field plate trench transistor and method for producing it
INFINEON TECHNOLOGIES AUSTRIA2 citations63
US7999287B2Aug 16, 2011
Lateral HEMT and method for the production of a lateral HEMT
INFINEON TECHNOLOGIES AUSTRIA3 citations63
INFINEON TECHNOLOGIES AG
11 patentsUS6998678B2Feb 14, 2006
Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode
INFINEON TECHNOLOGIES AG69 citations98
US6806533B2Oct 19, 2004
Semiconductor component with an increased breakdown voltage in the edge area
INFINEON TECHNOLOGIES AG83 citations98
US6690062B2Feb 10, 2004
Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance
INFINEON TECHNOLOGIES AG119 citations98
US7005351B2Feb 28, 2006
Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration
INFINEON TECHNOLOGIES AG113 citations97
US7091573B2Aug 15, 2006
Power transistor
INFINEON TECHNOLOGIES AG62 citations96
US7250343B2Jul 31, 2007
Power transistor arrangement and method for fabricating it
INFINEON TECHNOLOGIES AG37 citations92
US7186618B2Mar 6, 2007
Power transistor arrangement and method for fabricating it
INFINEON TECHNOLOGIES AG32 citations92
US6891223B2May 10, 2005
Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell
INFINEON TECHNOLOGIES AG52 citations92
US7307010B2Dec 11, 2007
Method for processing a thin semiconductor substrate
INFINEON TECHNOLOGIES AG12 citations84
US6858895B2Feb 22, 2005
Circuit configuration having a field-effect transistor operable at higher frequencies
INFINEON TECHNOLOGIES AG19 citations80
US6927101B2Aug 9, 2005
Field-effect-controllable semiconductor component and method for fabricating the component
INFINEON TECHNOLOGIES AG8 citations74
INFINEON TECHNOLOGIES AUSTRIA AG
8 patentsUS9793391B2Oct 17, 2017
Power MOSFET semiconductor
INFINEON TECHNOLOGIES AUSTRIA AG5 citations84
US10283634B2May 7, 2019
Power MOSFET semiconductor
INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US9773706B2Sep 26, 2017
Semiconductor device having field-effect structures with different gate materials, and method for manufacturing thereof
INFINEON TECHNOLOGIES AUSTRIA AG5 citations73
US9509284B2Nov 29, 2016
Electronic circuit and method for operating a transistor arrangement
INFINEON TECHNOLOGIES AUSTRIA AG5 citations73
US9406673B2Aug 2, 2016
Semiconductor component with transistor
INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US10438945B2Oct 8, 2019
Method of manufacturing a semiconductor die
INFINEON TECHNOLOGIES AUSTRIA AG3 citations69
US12094963B2Sep 17, 2024
Nitride semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations63
US11004966B2May 11, 2021
Nitride semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations63
SCHULER GMBH L
6 patentsUS5383348AJan 24, 1995
Press comprising a transfer device for sheet metal parts
SCHULER GMBH L25 citations91
US5363683ANov 15, 1994
Forming machine
SCHULER GMBH L15 citations74
US5048318ASep 17, 1991
Intermediate depositing station between machining stages of a press
SCHULER GMBH L10 citations74
US4932235AJun 12, 1990
Arrangement for the coupling and uncoupling of gripper rail parts
SCHULER GMBH L10 citations74
US5385040AJan 31, 1995
Press comprising a transfer device for sheet metal parts
SCHULER GMBH L15 citations72
US4924692AMay 15, 1990
Transfer press having gripper rails which can be transversely separated along their length
SCHULER GMBH L9 citations66
HIRLER FRANZ
4 patentsUS8334564B2Dec 18, 2012
Field plate trench transistor and method for producing it
HIRLER FRANZ8 citations84
US8314447B2Nov 20, 2012
Semiconductor including lateral HEMT
HIRLER FRANZ14 citations84
US8084865B2Dec 27, 2011
Anchoring structure and intermeshing structure
HIRLER FRANZ17 citations84
US8067796B2Nov 29, 2011
Semiconductor component with cell structure and method for producing the same
HIRLER FRANZ2 citations63
HAEBERLEN OLIVER
2 patentsLEITL WERKE BAUHUETTE
2 patentsSCHULER PRESSEN GMBH & CO
2 patentsRIEGER WALTER
1 patentKERNFORSCHUNGSZ KARLSRUHE
1 patentShowing the top 50 of 71 patents by PatentIndex Score.