Inventor
KAHNG DAWON
11 patents
⚠️ This page may combine multiple inventors who share the name “KAHNG DAWON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
BELL TELEPHONE LABOR INC
6 patentsUS4324038AApr 13, 1982
Method of fabricating MOS field effect transistors
BELL TELEPHONE LABOR INC128 citations95
US3964085AJun 15, 1976
Method for fabricating multilayer insulator-semiconductor memory apparatus
BELL TELEPHONE LABOR INC91 citations89
US4271583AJun 9, 1981
Fabrication of semiconductor devices having planar recessed oxide isolation region
BELL TELEPHONE LABOR INC27 citations78
US4214359AJul 29, 1980
MOS Devices having buried terminal zones under local oxide regions
BELL TELEPHONE LABOR INC17 citations73
US3945031AMar 16, 1976
Charge effects in doped silicon dioxide
BELL TELEPHONE LABOR INC15 citations70
US4135289AJan 23, 1979
Method for producing a buried junction memory device
BELL TELEPHONE LABOR INC13 citations66
AT & T BELL LAB
2 patentsNEC RESEARCH INST INC
2 patentsUS5198721AMar 30, 1993
Electroluminescent cell using a ZnS host including molecules of a ternary europium tetrafluoride compound
NEC RESEARCH INST INC9 citations73
US5286517AFeb 15, 1994
A process for making an electroluminescent cell using a ZnS host including molecules of a ternary europium tetrafluoride compound
NEC RESEARCH INST INC8 citations65