Inventor
NAKAZAWA HARUO
JP43 patents
⚠️ This page may combine multiple inventors who share the name “NAKAZAWA HARUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
23 patentsUS9825145B2Nov 21, 2017
Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology
FUJI ELECTRIC CO LTD2 citations73
US10727060B2Jul 28, 2020
Doping system, doping method and method for manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US10658183B2May 19, 2020
Impurity adding apparatus, impurity adding method, and semiconductor element manufacturing method
FUJI ELECTRIC CO LTD2 citations72
US9659774B2May 23, 2017
Impurity introducing method, impurity introducing apparatus, and method of manufacturing semiconductor element
FUJI ELECTRIC CO LTD3 citations72
US10026831B2Jul 17, 2018
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD3 citations71
US9564334B2Feb 7, 2017
Method of manufacturing a semiconductor device
FUJI ELECTRIC CO LTD2 citations71
US9548205B2Jan 17, 2017
Method of manufacturing a semiconductor device
FUJI ELECTRIC CO LTD2 citations71
US11069779B2Jul 20, 2021
Silicon carbide semiconductor device and method for manufacturing the same
FUJI ELECTRIC CO LTD0 citations62
US9018633B2Apr 28, 2015
Semiconductor device
FUJI ELECTRIC CO LTD3 citations62
US8962405B2Feb 24, 2015
Method of manufacturing semiconductor device by mounting and positioning a semiconductor die using detection marks
FUJI ELECTRIC CO LTD2 citations62
US11245010B2Feb 8, 2022
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US10109501B2Oct 23, 2018
Manufacturing method of semiconductor device having a voltage resistant structure
FUJI ELECTRIC CO LTD0 citations52
US9786749B2Oct 10, 2017
Semiconductor device having a voltage resistant structure
FUJI ELECTRIC CO LTD0 citations52
US11264240B2Mar 1, 2022
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US10453687B2Oct 22, 2019
Method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US10205010B2Feb 12, 2019
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US9972499B2May 15, 2018
Method for forming metal-semiconductor alloy using hydrogen plasma
FUJI ELECTRIC CO LTD1 citations51
US9905684B2Feb 27, 2018
Semiconductor device having schottky junction between substrate and drain electrode
FUJI ELECTRIC CO LTD0 citations51
US9892919B2Feb 13, 2018
Semiconductor device manufacturing method
FUJI ELECTRIC CO LTD1 citations51
US9431270B2Aug 30, 2016
Method for producing semiconductor device
FUJI ELECTRIC CO LTD1 citations51
US8809130B2Aug 19, 2014
Reverse block-type insulated gate bipolar transistor manufacturing method
FUJI ELECTRIC CO LTD1 citations51
US10559664B2Feb 11, 2020
Method of manufacturing semiconductor device by removing a bulk layer to expose an epitaxial-growth layer and by removing portions of a supporting-substrate to expose portions of the epitaxial-growth layer
FUJI ELECTRIC CO LTD0 citations41
US9450070B2Sep 20, 2016
Method for manufacturing a silicon semiconductor substrate including a diffusion layer prior to forming a semiconductor device thereon
FUJI ELECTRIC CO LTD0 citations40
NAKAZAWA HARUO
9 patentsUS9418852B2Aug 16, 2016
Method of manufacturing a semiconductor device
NAKAZAWA HARUO1 citations51
US8999768B2Apr 7, 2015
Semiconductor device manufacturing method
NAKAZAWA HARUO1 citations51
US8759870B2Jun 24, 2014
Semiconductor device
NAKAZAWA HARUO0 citations51
US8697558B2Apr 15, 2014
Semiconductor device and manufacturing method thereof
NAKAZAWA HARUO0 citations51
US8420512B2Apr 16, 2013
Method for manufacturing semiconductor device
NAKAZAWA HARUO1 citations51
US8460975B2Jun 11, 2013
Reverse block-type insulated gate bipolar transistor manufacturing method
NAKAZAWA HARUO1 citations50
US8692350B2Apr 8, 2014
Semiconductor device and method of manufacturing the same
NAKAZAWA HARUO1 citations49
US8853009B2Oct 7, 2014
Method for manufacturing reverse-blocking semiconductor element
NAKAZAWA HARUO0 citations41
US10115587B2Oct 30, 2018
Method of manufacturing semiconductor device
NAKAZAWA HARUO0 citations39
FUJI ELECTRIC SYSTEMS CO LTD
3 patentsUS7741192B2Jun 22, 2010
Semiconductor device and manufacturing method thereof
FUJI ELECTRIC SYSTEMS CO LTD23 citations92
US7776672B2Aug 17, 2010
Semiconductor device and manufacturing method thereof
FUJI ELECTRIC SYSTEMS CO LTD12 citations83
US7807554B2Oct 5, 2010
Method of manufacturing semiconductor element
FUJI ELECTRIC SYSTEMS CO LTD0 citations52