Inventor
CHEN YUNG-TIN
US62 patents
⚠️ This page may combine multiple inventors who share the name “CHEN YUNG-TIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK 3D LLC
18 patentsUS9653617B2May 16, 2017
Multiple junction thin film transistor
SANDISK 3D LLC43 citations94
US7553611B2Jun 30, 2009
Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure
SANDISK 3D LLC21 citations93
US8933516B1Jan 13, 2015
High capacity select switches for three-dimensional structures
SANDISK 3D LLC26 citations92
US7786015B2Aug 31, 2010
Method for fabricating self-aligned complementary pillar structures and wiring
SANDISK 3D LLC29 citations92
US9583615B2Feb 28, 2017
Vertical transistor and local interconnect structure
SANDISK 3D LLC17 citations84
US8658526B2Feb 25, 2014
Methods for increased array feature density
SANDISK 3D LLC4 citations84
US7846756B2Dec 7, 2010
Nanoimprint enhanced resist spacer patterning method
SANDISK 3D LLC15 citations84
US7781269B2Aug 24, 2010
Triangle two dimensional complementary patterning of pillars
SANDISK 3D LLC9 citations84
US7923305B1Apr 12, 2011
Patterning method for high density pillar structures
SANDISK 3D LLC16 citations83
US9064547B2Jun 23, 2015
3D non-volatile memory having low-current cells and methods
SANDISK 3D LLC4 citations73
US7794921B2Sep 14, 2010
Imaging post structures using x and y dipole optics and a single mask
SANDISK 3D LLC6 citations72
US8637389B2Jan 28, 2014
Resist feature and removable spacer pitch doubling patterning method for pillar structures
SANDISK 3D LLC2 citations63
US8372740B2Feb 12, 2013
Methods for increased array feature density
SANDISK 3D LLC1 citations63
US8357606B2Jan 22, 2013
Resist feature and removable spacer pitch doubling patterning method for pillar structures
SANDISK 3D LLC3 citations63
US7982273B2Jul 19, 2011
Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure
SANDISK 3D LLC4 citations63
US8026178B2Sep 27, 2011
Patterning method for high density pillar structures
SANDISK 3D LLC4 citations61
US7968277B2Jun 28, 2011
Imaging post structures using X and Y dipole optics and a single mask
SANDISK 3D LLC2 citations61
US7682942B2Mar 23, 2010
Method for reducing pillar structure dimensions of a semiconductor device
SANDISK 3D LLC5 citations61
CHEN YUNG-TIN
8 patentsUS8389971B2Mar 5, 2013
Memory cells having storage elements that share material layers with steering elements and methods of forming the same
CHEN YUNG-TIN44 citations97
US8084682B2Dec 27, 2011
Multiple band gapped cadmium telluride photovoltaic devices and process for making the same
CHEN YUNG-TIN29 citations92
US8841648B2Sep 23, 2014
Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
CHEN YUNG-TIN9 citations84
US8080443B2Dec 20, 2011
Method of making pillars using photoresist spacer mask
CHEN YUNG-TIN16 citations84
US7901975B2Mar 8, 2011
Continuous deposition process and apparatus for manufacturing cadmium telluride photovoltaic devices
CHEN YUNG-TIN11 citations84
US8084347B2Dec 27, 2011
Resist feature and removable spacer pitch doubling patterning method for pillar structures
CHEN YUNG-TIN1 citations63
US7960252B2Jun 14, 2011
Method for forming a semiconductor film including a film forming gas and decomposing gas while emitting a laser sheet
CHEN YUNG-TIN5 citations63
US7291562B2Nov 6, 2007
Method to form topography in a deposited layer above a substrate
CHEN YUNG-TIN2 citations62
SANDISK CORP
3 patentsCHEN YUNG TIN
3 patentsUS10825834B1Nov 3, 2020
Three-dimensional ferroelectric random-access memory (FeRAM)
CHEN YUNG TIN17 citations94
US11515330B2Nov 29, 2022
Three-dimensional ferroelectric random-access memory (FeRAM)
CHEN YUNG TIN4 citations73
US11462567B2Oct 4, 2022
Three-dimensional ferroelectric random-access memory (FeRAM)
CHEN YUNG TIN0 citations62
NUSTORAGE TECH CO LTD
3 patentsUS10424598B2Sep 24, 2019
Three-dimensional memory device and manufacturing method thereof
NUSTORAGE TECH CO LTD8 citations83
US10403721B2Sep 3, 2019
Field effect transistor, memory element and manufacturing method of charge storage structure using paraelectric and ferroelectric material
NUSTORAGE TECH CO LTD7 citations83
US10367004B2Jul 30, 2019
Vertical ferroelectric thin film storage transistor and data write and read methods thereof
NUSTORAGE TECH CO LTD1 citations61
SAMSUNG ELECTRONICS CO LTD
2 patentsSANDISK TECHNOLOGIES INC
1 patentAUCMOS TECH USA INC
1 patentCHEN XIYING
1 patentSCHEUERLEIN ROY E
1 patentKREUPL FRANZ
1 patentXU HUIWEN
1 patentTAIWAN SEMICONDUCTOR MFG
1 patentZHANG TONG
1 patentMAXWELL STEVEN
1 patentHOU KUN
1 patentCOSTA XIYING
1 patentNGUYEN NATALIE
1 patentWANG CHUN-MING
1 patentShowing the top 50 of 62 patents by PatentIndex Score.