Inventor

KUMAR TANMAY

US88 patents

⚠️ This page may combine multiple inventors who share the name “KUMAR TANMAY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUMAR TANMAY

SANDISK 3D LLC

Method for forming doped polysilicon via connecting polysilicon layers

Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride

Doped polysilicon via connecting polysilicon layers

Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

Nonvolatile memory cell comprising a diode and a resistance-switching material

Method of making non-volatile memory cell with embedded antifuse

Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure

Reverse bias trim operations in non-volatile memory

Dual insulating layer diode with asymmetric interface state and method of fabrication

Method of programming a nonvolatile memory device containing a carbon storage material

MIIM diodes having stacked structure

Devices having reversible resistivity-switching metal oxide or nitride layer with added metal

Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance

Programming methods to increase window for reverse write 3D cell

Systems for controlled pulse operations in non-volatile memory

Large capacity one-time programmable memory cell using metal oxides

Controlled pulse operations in non-volatile memory

Systems for reverse bias trim operations in non-volatile memory

Method for using a multi-use memory cell and memory array

Programming a memory cell with a diode in series by applying reverse bias

Nonvolatile memory cell including carbon storage element formed on a silicide layer

Method for forming doped polysilicon via connecting polysilicon layers

Memory cell comprising switchable semiconductor memory element with trimmable resistance

CROSSBAR INC

Enhanced erasing of two-terminal memory

Neuromorphic logic for an array of high on/off ratio non-volatile memory cells

Noble metal / non-noble metal electrode for RRAM applications

Enhanced programming of two-terminal memory

MLC OTP operation in A-Si RRAM

Resistive memory cell with solid state diode

Field programmable gate array utilizing two-terminal non-volatile memory

Soak time programming for two-terminal memory

KUMAR TANMAY

Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride

Resistive switching device structure with improved data retention for non-volatile memory device and method

Amorphous silicon RRAM with non-linear device and operation

Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element

SANDISK TECHNOLOGIES LLC

Resistive memory device having sidewall spacer electrode and method of making thereof

Multi-gate vertical field effect transistor with channel strips laterally confined by gate dielectric layers, and method of making thereof

Methods and apparatus for three-dimensional nonvolatile memory

MILLER MICHAEL

Surface treatment to improve resistive-switching characteristics

Surface treatment to improve resistive-switching characteristics

Surface treatment to improve resistive-switching characteristics

JO SUNG HYUN

Multi-level cell operation using zinc oxide switching material in non-volatile memory device

Noble metal/non-noble metal electrode for RRAM applications

NAZARIAN HAGOP

Field programmable gate array utilizing two-terminal non-volatile memory

Field programmable gate array utilizing two-terminal non-volatile memory

MATRIX SEMICONDUCTOR INC

Transistor layout configuration for tight-pitched memory array lines

SUN XIN

Low temperature P+ polycrystalline silicon material for non-volatile memory device

DALLAS SEMICONDUCTOR

Method of making polysilicon resistor having adjustable temperature coefficients

INTERMOLECULAR INC

Surface treatment to improve resistive-switching characteristics

HERNER S BRAD

Method of making nonvolatile memory device containing carbon or nitrogen doped diode