P

Inventor

ANG CHEW HOE

SG29 patents
⚠️ This page may combine multiple inventors who share the name “ANG CHEW HOE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHARTERED SEMICONDUCTOR MFG

28 patents
US6743291B2Jun 1, 2004

Method of fabricating a CMOS device with integrated super-steep retrograde twin wells using double selective epitaxial growth

CHARTERED SEMICONDUCTOR MFG125 citations98
US6664156B1Dec 16, 2003

Method for forming L-shaped spacers with precise width control

CHARTERED SEMICONDUCTOR MFG76 citations98
US6632712B1Oct 14, 2003

Method of fabricating variable length vertical transistors

CHARTERED SEMICONDUCTOR MFG89 citations97
US7103861B2Sep 5, 2006

Test structure for automatic dynamic negative-bias temperature instability testing

CHARTERED SEMICONDUCTOR MFG16 citations93
US7479425B2Jan 20, 2009

Method for forming high-K charge storage device

CHARTERED SEMICONDUCTOR MFG40 citations92
US7202140B1Apr 10, 2007

Method to fabricate Ge and Si devices together for performance enhancement

CHARTERED SEMICONDUCTOR MFG21 citations92
US6830971B2Dec 14, 2004

High K artificial lattices for capacitor applications to use in CU or AL BEOL

CHARTERED SEMICONDUCTOR MFG26 citations92
US6762085B2Jul 13, 2004

Method of forming a high performance and low cost CMOS device

CHARTERED SEMICONDUCTOR MFG36 citations92
US6734082B2May 11, 2004

Method of forming a shallow trench isolation structure featuring a group of insulator liner layers located on the surfaces of a shallow trench shape

CHARTERED SEMICONDUCTOR MFG45 citations92
US6670248B1Dec 30, 2003

Triple gate oxide process with high-k gate dielectric

CHARTERED SEMICONDUCTOR MFG48 citations92
US6403425B1Jun 11, 2002

Dual gate oxide process with reduced thermal distribution of thin-gate channel implant profiles due to thick-gate oxide

CHARTERED SEMICONDUCTOR MFG25 citations92
US6468851B1Oct 22, 2002

Method of fabricating CMOS device with dual gate electrode

CHARTERED SEMICONDUCTOR MFG55 citations91
US6709912B1Mar 23, 2004

Dual Si-Ge polysilicon gate with different Ge concentrations for CMOS device optimization

CHARTERED SEMICONDUCTOR MFG53 citations90
US6841441B2Jan 11, 2005

Method to produce dual gates (one metal and one poly or metal silicide) for CMOS devices using sputtered metal deposition, metallic ion implantation, or silicon implantation, and laser annealing

CHARTERED SEMICONDUCTOR MFG12 citations84
US6664153B2Dec 16, 2003

Method to fabricate a single gate with dual work-functions

CHARTERED SEMICONDUCTOR MFG18 citations84
US6610575B1Aug 26, 2003

Forming dual gate oxide thickness on vertical transistors by ion implantation

CHARTERED SEMICONDUCTOR MFG16 citations84
US6429109B1Aug 6, 2002

Method to form high k dielectric and silicide to reduce poly depletion by using a sacrificial metal between oxide and gate

CHARTERED SEMICONDUCTOR MFG18 citations84
US7176094B2Feb 13, 2007

Ultra-thin gate oxide through post decoupled plasma nitridation anneal

CHARTERED SEMICONDUCTOR MFG15 citations83
US6605501B1Aug 12, 2003

Method of fabricating CMOS device with dual gate electrode

CHARTERED SEMICONDUCTOR MFG14 citations82
US7562318B2Jul 14, 2009

Test structure for automatic dynamic negative-bias temperature instability testing

CHARTERED SEMICONDUCTOR MFG6 citations74
US6586314B1Jul 1, 2003

Method of forming shallow trench isolation regions with improved corner rounding

CHARTERED SEMICONDUCTOR MFG7 citations74
US6610604B1Aug 26, 2003

Method of forming small transistor gates by using self-aligned reverse spacer as a hard mask

CHARTERED SEMICONDUCTOR MFG10 citations73
US7132878B2Nov 7, 2006

Charge pump current source

CHARTERED SEMICONDUCTOR MFG7 citations72
US7095073B2Aug 22, 2006

High K artificial lattices for capacitor applications to use in Cu or Al BEOL

CHARTERED SEMICONDUCTOR MFG4 citations62
US6544848B1Apr 8, 2003

Method to form an asymmetrical non-volatile memory device using small in-situ doped polysilicon spacers

CHARTERED SEMICONDUCTOR MFG6 citations62
US7022625B2Apr 4, 2006

Method of fabricating a gate dielectric layer with reduced gate tunnelling current and reduced boron penetration

CHARTERED SEMICONDUCTOR MFG4 citations60
US7326609B2Feb 5, 2008

Semiconductor device and fabrication method

CHARTERED SEMICONDUCTOR MFG0 citations52
US6828082B2Dec 7, 2004

Method to pattern small features by using a re-flowable hard mask

CHARTERED SEMICONDUCTOR MFG1 citations52

ADVANCED MICRO DEVICES INC

1 patent