Inventor
TAN SHYUE SENG
SG194 patents
⚠️ This page may combine multiple inventors who share the name “TAN SHYUE SENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES SG PTE LTD
33 patentsUS8368127B2Feb 5, 2013
Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current
GLOBALFOUNDRIES SG PTE LTD23 citations93
US10847720B1Nov 24, 2020
Non-volatile memory elements with filament confinement
GLOBALFOUNDRIES SG PTE LTD7 citations84
US10468427B2Nov 5, 2019
Poly-insulator-poly (PIP) capacitor
GLOBALFOUNDRIES SG PTE LTD7 citations84
US9646963B1May 9, 2017
Integrated circuits with capacitors and methods for producing the same
GLOBALFOUNDRIES SG PTE LTD10 citations84
US9620642B2Apr 11, 2017
FinFET with isolation
GLOBALFOUNDRIES SG PTE LTD11 citations84
US9431497B2Aug 30, 2016
Transistor devices having an anti-fuse configuration and methods of forming the same
GLOBALFOUNDRIES SG PTE LTD15 citations84
US9178138B2Nov 3, 2015
Method for forming a PCRAM with low reset current
GLOBALFOUNDRIES SG PTE LTD5 citations84
US10217828B1Feb 26, 2019
Transistors with field plates on fully depleted silicon-on-insulator platform and method of making the same
GLOBALFOUNDRIES SG PTE LTD7 citations81
US11793004B2Oct 17, 2023
Resistive random access memory devices
GLOBALFOUNDRIES SG PTE LTD3 citations73
US11585703B2Feb 21, 2023
On-chip temperature sensing with non-volatile memory elements
GLOBALFOUNDRIES SG PTE LTD2 citations73
US11404549B2Aug 2, 2022
Split gate flash memory cells with a trench-formed select gate
GLOBALFOUNDRIES SG PTE LTD2 citations73
US11335852B2May 17, 2022
Resistive random access memory devices
GLOBALFOUNDRIES SG PTE LTD2 citations73
US11217747B2Jan 4, 2022
Memory devices and methods of forming memory devices
GLOBALFOUNDRIES SG PTE LTD2 citations73
US11050426B1Jun 29, 2021
Logic gate devices and methods of forming a logic gate device
GLOBALFOUNDRIES SG PTE LTD2 citations73
US10950661B2Mar 16, 2021
Integrated circuits with resistive non-volatile memory cells and methods for producing the same
GLOBALFOUNDRIES SG PTE LTD2 citations73
US10762966B2Sep 1, 2020
Memory arrays and methods of forming the same
GLOBALFOUNDRIES SG PTE LTD2 citations73
US10700277B1Jun 30, 2020
Memory device and a method for forming the memory device
GLOBALFOUNDRIES SG PTE LTD2 citations73
US10495603B1Dec 3, 2019
High performance ISFET with ferroelectric material
GLOBALFOUNDRIES SG PTE LTD2 citations73
US10276582B2Apr 30, 2019
High coupling ratio split gate memory cell
GLOBALFOUNDRIES SG PTE LTD2 citations73
US10163979B2Dec 25, 2018
Selector-resistive random access memory cell
GLOBALFOUNDRIES SG PTE LTD4 citations73
US9825223B2Nov 21, 2017
Fin selector with gated RRAM
GLOBALFOUNDRIES SG PTE LTD2 citations73
US9728721B2Aug 8, 2017
Resistive memory device
GLOBALFOUNDRIES SG PTE LTD2 citations73
US9608081B2Mar 28, 2017
Simple and cost-free MTP structure
GLOBALFOUNDRIES SG PTE LTD4 citations73
US9368386B2Jun 14, 2016
Corner transistor suppression
GLOBALFOUNDRIES SG PTE LTD3 citations73
US9362374B2Jun 7, 2016
Simple and cost-free MTP structure
GLOBALFOUNDRIES SG PTE LTD4 citations73
US9276206B2Mar 1, 2016
Scalable and reliable non-volatile memory cell
GLOBALFOUNDRIES SG PTE LTD4 citations73
US10724983B2Jul 28, 2020
Sensor device and a method for forming the sensor device
GLOBALFOUNDRIES SG PTE LTD2 citations72
US10090311B1Oct 2, 2018
Cost-free MTP memory structure with reduced terminal voltages
GLOBALFOUNDRIES SG PTE LTD3 citations72
US9515152B2Dec 6, 2016
Simple and cost-free MTP structure
GLOBALFOUNDRIES SG PTE LTD5 citations72
US12107124B2Oct 1, 2024
Bipolar transistors
GLOBALFOUNDRIES SG PTE LTD0 citations63
US11646360B2May 9, 2023
OTP-MTP on FDSOI architecture and method for producing the same
GLOBALFOUNDRIES SG PTE LTD0 citations63
US11552128B2Jan 10, 2023
Memory device, memory array and method of forming the same
GLOBALFOUNDRIES SG PTE LTD0 citations63
US11355599B2Jun 7, 2022
Devices with lower resistance and improved breakdown and method for producing the same
GLOBALFOUNDRIES SG PTE LTD0 citations63
TOH ENG HUAT
6 patentsUS8698118B2Apr 15, 2014
Compact RRAM device and methods of making same
TOH ENG HUAT9 citations84
US8647937B2Feb 11, 2014
Deep depleted channel MOSFET with minimized dopant fluctuation and diffusion levels
TOH ENG HUAT10 citations84
US9276041B2Mar 1, 2016
Three dimensional RRAM device, and methods of making same
TOH ENG HUAT3 citations73
US9029231B2May 12, 2015
Fin selector with gated RRAM
TOH ENG HUAT4 citations73
US8750037B2Jun 10, 2014
Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof
TOH ENG HUAT4 citations73
US8674332B2Mar 18, 2014
RRAM device with an embedded selector structure and methods of making same
TOH ENG HUAT5 citations73
TAN SHYUE SENG
6 patentsUS8324031B2Dec 4, 2012
Diffusion barrier and method of formation thereof
TAN SHYUE SENG10 citations84
US8211761B2Jul 3, 2012
Semiconductor system using germanium condensation
TAN SHYUE SENG17 citations84
US8946806B2Feb 3, 2015
Memory cell with decoupled channels
TAN SHYUE SENG12 citations83
US8647946B2Feb 11, 2014
Control gate
TAN SHYUE SENG8 citations83
US9263132B2Feb 16, 2016
Double gated flash memory
TAN SHYUE SENG6 citations73
US8673692B2Mar 18, 2014
Charging controlled RRAM device, and methods of making same
TAN SHYUE SENG5 citations70
CHARTERED SEMICONDUCTOR MFG
3 patentsUS7103861B2Sep 5, 2006
Test structure for automatic dynamic negative-bias temperature instability testing
CHARTERED SEMICONDUCTOR MFG16 citations93
US7562318B2Jul 14, 2009
Test structure for automatic dynamic negative-bias temperature instability testing
CHARTERED SEMICONDUCTOR MFG6 citations74
US7132878B2Nov 7, 2006
Charge pump current source
CHARTERED SEMICONDUCTOR MFG7 citations72
UTOMO HENRY K
1 patentTEO LEE WEE
1 patentShowing the top 50 of 194 patents by PatentIndex Score.