Inventor
MATSUKI TAKEO
JP15 patents
⚠️ This page may combine multiple inventors who share the name “MATSUKI TAKEO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
8 patentsUS5960252ASep 28, 1999
Method for manufacturing a semiconductor memory device having a ferroelectric capacitor
NEC CORP59 citations96
US6545360B1Apr 8, 2003
Semiconductor device and manufacturing method thereof
NEC CORP58 citations95
US6121083ASep 19, 2000
Semiconductor device and method of fabricating the same
NEC CORP43 citations95
US6531749B1Mar 11, 2003
Field effect transistor having a two layered gate electrode
NEC CORP22 citations92
US6429089B1Aug 6, 2002
Semiconductor device and method of fabricating the same
NEC CORP37 citations92
US6081417AJun 27, 2000
Capacitor having a ferroelectric layer
NEC CORP28 citations92
US6423999B1Jul 23, 2002
Semiconductor device and capacitor with means to prevent deterioration due to hydrogen
NEC CORP11 citations73
US5976946ANov 2, 1999
Thin film formation method for ferroelectric materials
NEC CORP5 citations62
MATSUKI TAKEO
4 patentsUS8299536B2Oct 30, 2012
Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof
MATSUKI TAKEO2 citations60
US8581350B2Nov 12, 2013
Field effect transistor and semiconductor device, and method for manufacturing same
MATSUKI TAKEO1 citations49
US8466053B2Jun 18, 2013
Method of manufacturing semiconductor device, and semiconductor device
MATSUKI TAKEO0 citations49
US8329540B2Dec 11, 2012
Semiconductor device and manufacturing method thereof
MATSUKI TAKEO0 citations39
NEC ELECTRONICS CORP
2 patentsUS6914336B2Jul 5, 2005
Semiconductor device structure and method for manufacturing the same
NEC ELECTRONICS CORP55 citations96
US7816213B2Oct 19, 2010
Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof
NEC ELECTRONICS CORP6 citations73