Inventor
TUNG MING-TSUNG
TW42 patents
⚠️ This page may combine multiple inventors who share the name “TUNG MING-TSUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
40 patentsUS6277675B1Aug 21, 2001
Method of fabricating high voltage MOS device
UNITED MICROELECTRONICS CORP67 citations96
US6392274B1May 21, 2002
High-voltage metal-oxide-semiconductor transistor
UNITED MICROELECTRONICS CORP33 citations92
US6376296B2Apr 23, 2002
High-voltage device and method for manufacturing high-voltage device
UNITED MICROELECTRONICS CORP23 citations92
US6319776B1Nov 20, 2001
Forming high voltage complementary semiconductor device (HV-CMOS) with gradient doping electrodes
UNITED MICROELECTRONICS CORP21 citations92
US6262459B1Jul 17, 2001
High-voltage device and method for manufacturing high-voltage device
UNITED MICROELECTRONICS CORP17 citations92
US6198131B1Mar 6, 2001
High-voltage metal-oxide semiconductor
UNITED MICROELECTRONICS CORP46 citations92
US6144069ANov 7, 2000
LDMOS transistor
UNITED MICROELECTRONICS CORP40 citations92
US6127213AOct 3, 2000
Method for simultaneously forming low voltage and high voltage devices
UNITED MICROELECTRONICS CORP25 citations92
US6117738ASep 12, 2000
Method for fabricating a high-bias semiconductor device
UNITED MICROELECTRONICS CORP49 citations92
US7118954B1Oct 10, 2006
High voltage metal-oxide-semiconductor transistor devices and method of making the same
UNITED MICROELECTRONICS CORP24 citations91
US6429077B1Aug 6, 2002
Method of forming a lateral diffused metal-oxide semiconductor transistor
UNITED MICROELECTRONICS CORP14 citations84
US6372579B1Apr 16, 2002
Producing laterally diffused metal-oxide semiconductor
UNITED MICROELECTRONICS CORP16 citations84
US6316299B1Nov 13, 2001
Formation of laterally diffused metal-oxide semiconductor device
UNITED MICROELECTRONICS CORP18 citations84
US6238959B1May 29, 2001
Method of fabricating LDMOS transistor
UNITED MICROELECTRONICS CORP19 citations84
US6222247B1Apr 24, 2001
Semiconductor resistor that can be withstand high voltages
UNITED MICROELECTRONICS CORP19 citations84
US6150219ANov 21, 2000
Method for fabricating a high bias device
UNITED MICROELECTRONICS CORP18 citations84
US7868372B2Jan 11, 2011
Depletion-mode single-poly EEPROM cell
UNITED MICROELECTRONICS CORP10 citations83
US7244975B2Jul 17, 2007
High-voltage device structure
UNITED MICROELECTRONICS CORP15 citations83
US8026549B2Sep 27, 2011
LDMOS with N-type isolation ring and method of fabricating the same
UNITED MICROELECTRONICS CORP9 citations82
US6391698B1May 21, 2002
Forming complementary metal-oxide semiconductor with gradient doped source/drain
UNITED MICROELECTRONICS CORP9 citations74
US6281080B1Aug 28, 2001
Fabrication method in improving ESD ability and vertical BJT gain
UNITED MICROELECTRONICS CORP9 citations74
US6258670B1Jul 10, 2001
Method for improving breakdown voltage of a semiconductor transistor
UNITED MICROELECTRONICS CORP11 citations74
US6214674B1Apr 10, 2001
Method of fabricating high voltage device suitable for low voltage device
UNITED MICROELECTRONICS CORP10 citations74
US6194772B1Feb 27, 2001
High-voltage semiconductor device with trench structure
UNITED MICROELECTRONICS CORP14 citations74
US6133606AOct 17, 2000
High voltage complementary semiconductor device (HV-CMOS) with gradient doping electrodes
UNITED MICROELECTRONICS CORP14 citations74
US6110803AAug 29, 2000
Method for fabricating a high-bias device
UNITED MICROELECTRONICS CORP14 citations74
US6023092AFeb 8, 2000
Semiconductor resistor for withstanding high voltages
UNITED MICROELECTRONICS CORP13 citations74
US5976922ANov 2, 1999
Method for fabricating a high bias device compatible with a low bias device
UNITED MICROELECTRONICS CORP7 citations74
US5976923ANov 2, 1999
Method for fabricating a high-voltage semiconductor device
UNITED MICROELECTRONICS CORP10 citations74
US6291303B1Sep 18, 2001
Method for manufacturing a bipolar junction device
UNITED MICROELECTRONICS CORP5 citations63
US6285059B1Sep 4, 2001
Structure for laterally diffused metal-oxide semiconductor
UNITED MICROELECTRONICS CORP4 citations63
US6239000B1May 29, 2001
Method of forming isolation structure for isolating high voltage devices
UNITED MICROELECTRONICS CORP4 citations63
US6180539B1Jan 30, 2001
Method of forming an inter-poly oxide layer
UNITED MICROELECTRONICS CORP5 citations63
US6140196AOct 31, 2000
Method of fabricating high power bipolar junction transistor
UNITED MICROELECTRONICS CORP4 citations63
US6140193AOct 31, 2000
Method for forming a high-voltage semiconductor device with trench structure
UNITED MICROELECTRONICS CORP4 citations63
US6130133AOct 10, 2000
Fabricating method of high-voltage device
UNITED MICROELECTRONICS CORP5 citations63
US7256095B2Aug 14, 2007
High voltage metal-oxide-semiconductor transistor devices and method of making the same
UNITED MICROELECTRONICS CORP3 citations61
US7560774B1Jul 14, 2009
IC chip
UNITED MICROELECTRONICS CORP5 citations60
US6136671AOct 24, 2000
Method for forming gate oxide layers
UNITED MICROELECTRONICS CORP1 citations52
US6063671AMay 16, 2000
Method of forming a high-voltage device
UNITED MICROELECTRONICS CORP1 citations52