Inventor
BHATTACHARYYA MANOJ
US25 patents
⚠️ This page may combine multiple inventors who share the name “BHATTACHARYYA MANOJ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HEWLETT PACKARD DEVELOPMENT CO
18 patentsUS6765819B1Jul 20, 2004
Magnetic memory device having improved switching characteristics
HEWLETT PACKARD DEVELOPMENT CO59 citations96
US6911710B2Jun 28, 2005
Multi-bit magnetic memory cells
HEWLETT PACKARD DEVELOPMENT CO22 citations92
US6867468B2Mar 15, 2005
Magnetic shielding for reducing magnetic interference
HEWLETT PACKARD DEVELOPMENT CO17 citations92
US6794695B2Sep 21, 2004
Magneto resistive storage device having a magnetic field sink layer
HEWLETT PACKARD DEVELOPMENT CO16 citations92
US6775196B2Aug 10, 2004
Magnetic memory having a temperature compensated write circuit
HEWLETT PACKARD DEVELOPMENT CO24 citations92
US6667901B1Dec 23, 2003
Dual-junction magnetic memory device and read method
HEWLETT PACKARD DEVELOPMENT CO29 citations92
US6597049B1Jul 22, 2003
Conductor structure for a magnetic memory
HEWLETT PACKARD DEVELOPMENT CO37 citations92
US6862212B2Mar 1, 2005
Multi-bit magnetic memory cells
HEWLETT PACKARD DEVELOPMENT CO12 citations84
US6756239B1Jun 29, 2004
Method for constructing a magneto-resistive element
HEWLETT PACKARD DEVELOPMENT CO13 citations84
US6643213B2Nov 4, 2003
Write pulse circuit for a magnetic memory
HEWLETT PACKARD DEVELOPMENT CO16 citations84
US6930369B2Aug 16, 2005
Thin film device and a method of providing thermal assistance therein
HEWLETT PACKARD DEVELOPMENT CO10 citations74
US6919594B2Jul 19, 2005
Magneto resistive storage device having a magnetic field sink layer
HEWLETT PACKARD DEVELOPMENT CO6 citations74
US6808940B2Oct 26, 2004
Magnetic shielding for reducing magnetic interference
HEWLETT PACKARD DEVELOPMENT CO5 citations74
US6803616B2Oct 12, 2004
Magnetic memory element having controlled nucleation site in data layer
HEWLETT PACKARD DEVELOPMENT CO5 citations74
US6795281B2Sep 21, 2004
Magneto-resistive device including soft synthetic ferrimagnet reference layer
HEWLETT PACKARD DEVELOPMENT CO7 citations74
US6740948B2May 25, 2004
Magnetic shielding for reducing magnetic interference
HEWLETT PACKARD DEVELOPMENT CO7 citations74
US6905888B2Jun 14, 2005
Magnetic memory element having controlled nucleation site in data layer
HEWLETT PACKARD DEVELOPMENT CO0 citations52
US7395020B1Jul 1, 2008
Imaging methods, imaging devices, transfer assemblies, and transfer member lubrication assemblies
HEWLETT PACKARD DEVELOPMENT CO0 citations51
HEWLETT PACKARD CO
6 patentsUS6236590B1May 22, 2001
Optimal write conductors layout for improved performance in MRAM
HEWLETT PACKARD CO116 citations98
US6479353B2Nov 12, 2002
Reference layer structure in a magnetic storage cell
HEWLETT PACKARD CO15 citations92
US6466471B1Oct 15, 2002
Low power MRAM memory array
HEWLETT PACKARD CO35 citations92
US6385083B1May 7, 2002
MRAM device including offset conductors
HEWLETT PACKARD CO48 citations92
US6297983B1Oct 2, 2001
Reference layer structure in a magnetic storage cell
HEWLETT PACKARD CO30 citations92
US6507513B1Jan 14, 2003
Using delayed electrical pulses with magneto-resistive devices
HEWLETT PACKARD CO4 citations61