Inventor
WANG CHING-YA
TW14 patents
⚠️ This page may combine multiple inventors who share the name “WANG CHING-YA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
13 patentsUS7834345B2Nov 16, 2010
Tunnel field-effect transistors with superlattice channels
TAIWAN SEMICONDUCTOR MFG57 citations98
US7329956B1Feb 12, 2008
Dual damascene cleaning method
TAIWAN SEMICONDUCTOR MFG16 citations84
US7332449B2Feb 19, 2008
Method for forming dual damascenes with supercritical fluid treatments
TAIWAN SEMICONDUCTOR MFG10 citations83
US8030210B2Oct 4, 2011
Contact barrier structure and manufacturing methods
TAIWAN SEMICONDUCTOR MFG6 citations73
US7709903B2May 4, 2010
Contact barrier structure and manufacturing methods
TAIWAN SEMICONDUCTOR MFG6 citations73
US7667247B2Feb 23, 2010
Method for passivating gate dielectric films
TAIWAN SEMICONDUCTOR MFG7 citations73
US7588995B2Sep 15, 2009
Method to create damage-free porous low-k dielectric films and structures resulting therefrom
TAIWAN SEMICONDUCTOR MFG7 citations73
US7314828B2Jan 1, 2008
Repairing method for low-k dielectric materials
TAIWAN SEMICONDUCTOR MFG6 citations63
US7387973B2Jun 17, 2008
Method for improving low-K dielectrics by supercritical fluid treatments
TAIWAN SEMICONDUCTOR MFG5 citations62
US6875285B2Apr 5, 2005
System and method for dampening high pressure impact on porous materials
TAIWAN SEMICONDUCTOR MFG5 citations62
US7951723B2May 31, 2011
Integrated etch and supercritical CO2 process and chamber design
TAIWAN SEMICONDUCTOR MFG1 citations52
US7538398B2May 26, 2009
System and method for forming a semiconductor device source/drain contact
TAIWAN SEMICONDUCTOR MFG0 citations52
US7354623B2Apr 8, 2008
Surface modification of a porous organic material through the use of a supercritical fluid
TAIWAN SEMICONDUCTOR MFG1 citations51