Inventor
HEO JIN-HWA
KR12 patents
⚠️ This page may combine multiple inventors who share the name “HEO JIN-HWA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
10 patentsUS6566229B2May 20, 2003
Method of forming an insulating layer in a trench isolation type semiconductor device
SAMSUNG ELECTRONICS CO LTD102 citations97
US6756654B2Jun 29, 2004
Structure of trench isolation and a method of forming the same
SAMSUNG ELECTRONICS CO LTD57 citations95
US6683354B2Jan 27, 2004
Semiconductor device having trench isolation layer and a method of forming the same
SAMSUNG ELECTRONICS CO LTD51 citations95
US7535061B2May 19, 2009
Fin-field effect transistors (Fin-FETs) having protection layers
SAMSUNG ELECTRONICS CO LTD23 citations92
US7160787B2Jan 9, 2007
Structure of trench isolation and a method of forming the same
SAMSUNG ELECTRONICS CO LTD31 citations92
US7141456B2Nov 28, 2006
Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layers
SAMSUNG ELECTRONICS CO LTD16 citations92
US6593207B2Jul 15, 2003
Method of forming a trench device isolation structure with upper liner pattern
SAMSUNG ELECTRONICS CO LTD25 citations92
US7351661B2Apr 1, 2008
Semiconductor device having trench isolation layer and a method of forming the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US6740955B1May 25, 2004
Trench device isolation structure
SAMSUNG ELECTRONICS CO LTD16 citations83
US8008154B2Aug 30, 2011
Methods of forming impurity containing insulating films and flash memory devices including the same
SAMSUNG ELECTRONICS CO LTD3 citations62